SMS7401 SECOS | Alldatasheet

Document overview

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Technical content

Continuous Drain Current@ Pulsed Drain Current Total Power Dissipation Drain-Source Diode Forward Current Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit A V V A A C W VDS VGS ID@TA= 25 IDM PD@TA=25 Tj, Tstg -30 ±12 - 8 -2.8 0.33 -1.4 -55~+150 o Co Co IS Thermal Data *week code: A~Z(1~26),a~z(27~52) TJ =150 Co ID@TA= 70 Co -2.1 PD@TA=70 0.21 Co Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient /W CRthj-a 105 o * -30V/-2.8A,RDS(ON)=115m @VGS=-10V * Super High Density Cell Design For Extremely Low RDS(ON) * Exceptional On-Resistance And Max. DC Current Capability F

Applications

  • DC/DC Converter * Power Management in Notebook * DSC * LCD Display Inverter * Portable Equipment * Battery Powered System * Load Switch Ω -30V/-2.5A,RDS(ON)=125m @VGS=-4.5VΩ -30V/-1.5A,RDS(ON)=170m @VGS=-2.5VΩ -30V/-1.0A,RDS(ON)=240m @VGS=-1.8VΩ eatures

Description

The SMS7401 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S 01-Jun-2002 Rev. A Page 1 of 5 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 SMS7401 -2.8A, -30V,RDS(ON) 115m P-Channel Enhancement Mode Power Mos.FET Ω RoHS Compliant Product

Electrical Characteristics( Tj=25 C Unless otherwise specified) o RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current Tj=85 Static Drain-Source On-Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) IGSS IDSS Crss Td(ON) Td(Off) Tr Ciss Coss Tf -30 100 0.105 0.115 0.125 0.135 0.155 0.17 3.9 0.21 0.24 380 V V nA uA nS pF Ω VGS=0V VDS=-15V f=1.0MHz VDD=-15V ID=-1A VGEN =-10V RG=3Ω VGS=-10V, ID=-2.8A VGS=-4.5V, ID=-2.5A VGS=0V, ID=-250uA VGS= ±12V,VDS=0V VDS=-24V,VGS=0V VDS=VGS, ID=-250uA Forward On Voltage VSD -0.8_ ID=-1.2A, VGS=0V.V-1.2 Forward Transconductance Gfs S4 VDS=-10V, ID=-2.8A_ Co -0.4 On-State Drain Current ID(ON) -4 _ _ A VDS=- 5V,VGS=-4.5V -5__ uA VDS=-24V,VGS=0V, VGS=-2.5V, ID=-1.5A VGS=-1.8V, ID=-1A RL =15Ω T o t a l G a t e C h a r g e Q g Q g s Q g d G a t e - S o u r c e C h a g r e G a t e - D r a i n C h a g r e 5 . 8 __ 0 . 8 __ 1 . 5 __ nC VGS=- 4 . 5 V VDS=-15V ID= - 2 A http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 Elektronische Bauelemente SMS7401 -2.8A, -30V,RDS(ON) 115m P-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 5 Elektronische Bauelemente SMS7401 -2.8A, -30V,RDS(ON) 115m P-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 5 Elektronische Bauelemente SMS7401 -2.8A, -30V,RDS(ON) 115m P-Channel Enhancement Mode Power Mos.FET Ω

http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 5 Elektronische Bauelemente SMS7401 -2.8A, -30V,RDS(ON) 115m P-Channel Enhancement Mode Power Mos.FET Ω