SMS7002K SECOS | Alldatasheet

Document overview

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Technical content

340mA, 60V , R DS(O/glyph1197) 5Ω /glyph1197-Ch Enhancement Mode Power MOSFET 03-Aug-2018 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 SOT -23 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 Epoxy Meets UL 94 V-0 Flammability Rating /circle6 Moisture Sensitivity Level 1 /circle6 High Density Cell Design for Low R DS(ON) /circle6 Voltage Controlled Small Signal Switch /circle6 Rugged and Reliable /circle6 ESD Protected up to 2.5KV(HBM) MARKING 72K

PACKAGE INFORMATION

(T A =25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current ID 340 mA Total Power Dissipation PD 350 mW Thermal Resistance from Junction-Ambient 1 R θJA 357 °C/W Operating Junction and Storage Temperature TJ, T STG -55~150 °C Part Number Type SMS7002K Lead (Pb)-free SMS7002K-C Lead (Pb)-free and Halogen-free A 2.70 3.10 G 0 0.18 B 2.10 3.00 H 0.55 REF. C 1.20 1.80 J 0.08 0.26 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50

340mA, 60V , R DS(O/glyph1197) 5Ω /glyph1197-Ch Enhancement Mode Power MOSFET 03-Aug-2018 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T A =25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage V(BR)DSS 60 - - V V GS =0, I D =250µA Zero Gate Voltage Drain Current IDSS - - 1 µA V DS =48V, V GS =0 - - ±10 µA V GS = ±20V, V DS =0 ±200 V GS = ±10V, V DS =0 Gate-Body Leakage Current I GSS ±100 nA VGS = ±5V, V DS =0 Gate Threshold Voltage 2 V GS(th) 1 1.4 2.5 V V DS =V GS , I D =250µA - - 5 V GS =10V, I D =500mA Drain-Source On-Resistance 2 R DS(ON) - - 5.3 Ω VGS =4.5V, I D =200mA Recovered Charge Q r - 30 - nC VGS =0, I D =300mA, VR=25V dI S/dt= -100A/µs Turn-on Time t (on) - 10 - Turn-off Time t (off) - 15 - VGS =10V, V DD =50V, R G =50Ω RGS=50Ω, RL =250Ω Reverse Recovery Time t rr - 30 - nS VGS =0, IS=300mA, VR=25V dI S/dt= -100A/µs Input Capacitance C iss - 40 - Output Capacitance C oss - 30 - Reverse Transfer Capacitance Crss - 10 - pF V DS =10V, V GS =0, f=1MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.5 V V GS =0, IS=300mA Notes: 1. Surface mounted on min. copper pad. 2. Pulse Test: Pulse Width ≦300µA, Duty Cycle ≦2%.

340mA, 60V , R DS(O/glyph1197) 5Ω /glyph1197-Ch Enhancement Mode Power MOSFET 03-Aug-2018 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTICS