SMS6001 SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

440mA, 60V , R DS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET 27-Jan-2014 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. * = Date Code RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA /circle6 Trench Technology /circle6 Supper high density cell design /circle6 Excellent ON resistance /circle6 Extremely Low Threshold Voltage /circle6 ESD Rating: 2KV HBM APPLICATION /circle6 DC-DC converter circuit /circle6 Load Switch DEVICE MARKING:

PACKAGE INFORMATION

SOT-23 3K 7’ inch MAXIMUM RATINGS (T A = 25° C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage VDS 60 V Gate – Source Voltage VGS ±20 V TA= 25° C 0.5 0.44 Continuous Drain Current 1.4 TA= 70° C ID 0.4 0.35 A TA= 25° C 0.69 0.53 Power Dissipation 1.4 TA= 70° C PD 0.44 0.34 W TA= 25° C 0.47 0.42 Continuous Drain Current 2.4 TA= 70° C ID 0.38 0.33 A TA= 25° C 0.6 0.47 Power Dissipation 2.4 TA= 70° C PD 0.39 0.3 W Pulsed Drain Current 3 IDM 1 A Maximum Junction-to-Lead R θJL 260 ° C / W Operating Junction & Storage Temperature Range T J, T STG -55~150 ° C SOT-23 W61* Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50 Pin Configuration (Top View)

440mA, 60V , R DS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET 27-Jan-2014 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. THERMAL RESISTANCE RATINGS ELECTRICAL CHARACTERISTICS (T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS 60 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 1 µA V DS =60V, V GS =0 Gate-Source Leakage I GSS - - ±5 µA V DS =0 , V GS = ±20V Gate-Threshold Voltage V GS(TH) 0.8 1.3 2 V V DS =V GS, ID =250 µA - 1.4 2 V GS =10V, I D =0.5A Drain-Source On Resistance 2.3 R DS(ON) - 1.7 2.6 Ω VGS =4.5V, I D =0.2A Forward Transconductance g FS - 0.42 - S V DS =15V, ID = 0.25A Body-Drain Diode Ratings Diode Forward On–Voltage V SD - 0.9 1.5 V I S=300mA, V GS =0 Dynamic Characteristics Input Capacitance C ISS - 23.37 - Output Capacitance C OSS - 7.33 - Reverse Transfer Capacitance C RSS - 5.2 - pF VDS =25V, VGS =0, f=1MHz Total Gate Charge Q G(TOT) - 1.2 - Threshold Gate Charge Q G(TH) - 0.15 - Gate-to-Source Charge Q GS - 0.21 - Gate-to-Drain Charge Q GD - 0.12 - nC VDD =30V, VGS =10V, ID =0.37A Turn-on Delay Time T d(ON) - 7.6 - Rise Time Tr - 5.1 - Turn-off Delay Time T d(OFF) - 24.6 - Fall Time Tf - 10 - nS VDD =30V, I D =0.2A, VGEN =10V, R G =10 Ω. Note: 1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper. 2. Surface mounted on FR4 board using minimum pad size, 1oz copper 3. Pulse width<380µs 4. Repetitive rating, pulse width limited by junction temperature TJ=150° C. Rating Parameter Symbol Typ. Max. Unit T≦10S 140 180 Junction-to-Ambient Thermal Resistance 1 Steady State R θJA 176 232 T≦10S 165 205 Junction-to-Ambient Thermal Resistance 2 Steady State R θJA 198 261 Junction-to-Case Thermal Resistance Steady State R θJC 100 120 ° C / W

440mA, 60V , R DS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET 27-Jan-2014 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

440mA, 60V , R DS(ON) 2Ω N-Ch Enhancement Mode Power MOSFET 27-Jan-2014 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES