SMS501DE SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

0.03A , 600V , R DS(ON) 700 Ω N-Ch Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT -23 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SMS501DE is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 Green Device Available MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±20 V TC =25° C 0.03 A Continuous Drain Current TC =100° C ID 0.024 A Pulsed Drain Current IDM 0.12 A TC =25° C 0.5 Total Power Dissipation Derate above 25° C PD 0.004 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 250 ° C / W Maximum Thermal Resistance Junction-Case R θJC 50 ° C / W Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50 501DE

0.03A , 600V , R DS(ON) 700 Ω N-Ch Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 600 - - V V GS =5V, I D = 250 µA Drain-Source Leakage Current ID(OFF) - - 0.1 µA V GS =5V, V DS =600V Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Gate-Threshold Voltage V GS(th) -2.7 - -1 V V DS =3V, I D =8µA Drain-Source Leakage Current I DSS 12 - - mA V DS =25V, V GS =0 - 310 700 V GS =0V, I D =3mA Static Drain-Source On-Resistance R DS(ON) - 330 700 Ω VGS =10V, I D =16mA Total Gate Charge 1.2 Q g - 1.8 - Gate-Source Charge 1.2 Q gs - 0.75 - Gate-Drain Change 1.2 Q gd - 0.56 - nC ID =0.01A VDS =4000V VGS =5V Turn-on Delay Time 1.2 T d(on) - 18 - Rise Time 1.2 Tr - 90 - Turn-off Delay Time 1.2 T d(off) - 93 - Fall Time 1.2 Tf - 210 - nS VDD =300V ID =0.01A VGS =-5V VGS =7V R G =6Ω Input Capacitance C iss - 99 - Output Capacitance C oss - 9.1 - Reverse Transfer Capacitance C rss - 5 - pF VGS =5V VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.2 V I S=16mA, V GS =5v Continuous Source Current I S - - 0.03 A Pulsed Source Current I SM - - 0.12 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time T rr - - 367 ns Reverse Recovery Charge Q rr - - 963 µC IF=0.01A,V R =300V, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.

0.03A , 600V , R DS(ON) 700 Ω N-Ch Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

0.03A , 600V , R DS(ON) 700 Ω N-Ch Enhancement Mode Power MOSFET 28-Oct-2013 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES