SMS4003K SECOS | Alldatasheet
Document overview
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Technical content
0.5 A, 30V
10-Jan-2010 Rev. A Page 1 of 4 GATE SOURCE DRAIN * Gate Pretection Diode Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 Low gate voltage threshold V GS(TH) to facilitate drive circuit design /circle6 Low gate charge for fast switching /circle6 ESD protected gate /circle6 Minimum breakdown voltage rating of 30V APPLICATION /circle6 Level shifters /circle6 Level switches /circle6 Low side load switches /circle6 Portable applications DEVICE MARKING: TR8 MAXIMUM RATINGS (T A = 25° C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS 30 V Gate – Source Voltage VGS ±20 V TA=25° C 0.5 Continuous Drain Current 1, Steady State TA=85° C ID 0.37 A Power Dissipation 1, Steady State P D 0.69 W TA=25° C 0.56 Continuous Drain Current 1 , t<10s TA=85° C ID 0.40 A Power Dissipation 1, t<5s PD 0.83 W Pulsed Drain Current IDM 1.7 A Steady State 1 180 t<10s 1 150 Maximum Junction – Ambient Steady State 2 R θJA 300 ° C/W Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C Source Current (Body Diode) I S 1.0 A Lead Temperature for Soldering Purposes(1/8” from case 10s T L 260 ° C Note: 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area=1.127 in sq 【1 oz 】including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size. SOT-23 A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50
10-Jan-2010 Rev. A Page 2 of 4
ELECTRICAL CHARACTERISTICS
(T A = 25° C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION STATIC CARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS 30 - - V V GS =0V, I D =100µA Gate-Source Threshold Voltage 3 V GS(TH) 0.8 - 1.6 V V DS = V GS, ID =250µA Gate-Source Leakage Current I GSS - - ±1.0 µA V GS =±10V Zero Gate Voltage Drain Current I DSS - - 1.0 µA V DS =30V, V GS =0V, T J=25° C - 1.5 2.0 V GS =2.5V, I D =10mA Drain-Source On-Resistance 3 R DS(ON) - 1.0 1.5 Ω VGS =4.0V, I D =10mA Forward Transconductance 3 g FS - 0.33 - S V DS =3V, I D =10mA DYNAMIC CHARACTERISTICS Input Capacitance C ISS - 21 - Output Capacitance C OSS - 19.7 - Reverse Transfer Capacitance C RSS - 8.1 - pF VDS =5V VGS =0V f=1MHz SWITCHING CHARACTERISTICS Turn-on Delay Time 4 T d(ON) - 16.7 - Rise Time 4 T R - 47.9 - Turn-off Delay Time 4 T d(OFF) - 65.1 - Fall Time 4 T F - 64.2 - nS VGS =4.5V VDD =5V I D =0.1A R G =50 Ω Total Gate Charge Q G - 1.15 - Threshold Gate Charge Q G(TH) - 0.15 - Gate-Source Charge Q GS - 0.32 - Gate-Drain Charge Q GD - 0.23 - nC VGS =5V VDS =24V I D =0.1A SOURCE-DRAIN DIODE CARACTERISTICS TJ=25° C - 0.65 0.7 Forward On Voltage TJ=125° C VSD - 0.45 - V VGS =0V IS =10mA Reverse Recovery Time T rr - 14 - nS V GS =0V, I S =10mA, dls/dt=8A / µs Note: 3. Pulse Test: Pulse width ≦300 µs, duty cycle ≦2%. 4. Switching characteristics are independent of operating junction temperatures.
10-Jan-2010 Rev. A Page 3 of 4 CHARACTERISTIC CURVES
10-Jan-2010 Rev. A Page 4 of 4 CHARACTERISTIC CURVES