SMS3401A_15 SECOS | Alldatasheet
Document overview
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Technical content
-4.2A , -30V , R DS(ON) 60 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS3401A provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID -4.2 A Maximum Power Dissipation P D 400 mW Thermal Resistance Junction-Ambient (t<5s) R θJA 313 ° C / W Operating Junction & Storage Temperature T J, T STG 150, -55~150 ° C SOT-23 R1 A Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.17 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50
-4.2A , -30V , R DS(ON) 60 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS -30 - - V V GS =0, I D = -250 µA Gate-Threshold Voltage V GS(th) -0.7 - -1.3 V V DS =V GS , I D = -250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V, VDS =0 Drain-Source Leakage Current I DSS - - -1 µA V DS = -24V, V GS =0 Forward Tranconductance 1 g fs 7 - - S V DS = -5V, I D = -5A - - 70 V GS = -4.5V, I D = -4A Static Drain-Source On-Resistance 1 R DS(ON) - - 85 m Ω VGS = -2.5V, I D = -1A Dynamic Parameters 2 Input Capacitance C iss - 1050 - Output Capacitance C oss - 127 - Reverse Transfer Capacitance C rss - 85 - pF VGS =0 VDS = -15V f =1.0MHz Turn-on Delay Time T d(on) - 6.5 - Rise Time Tr - 3.5 - Turn-off Delay Time T d(off) - 40 - Fall Time Tf - 13 - nS VGS = -10V VDS = -15V R GEN =6Ω R L=3.6Ω Source-Drain Diode Forward Voltage 1 V SD - - -1 V V GS =0, IS= -1A Note: 1. Pulse Test : Pulse width ≦300µs, duty cycle ≦2%. 2. These parameters have no way to verify.
-4.2A , -30V , R DS(ON) 60 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES