SMS3400A SECOS | Alldatasheet
Document overview
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Technical content
5.8A , 30V , R DS(ON) 32 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 06-Jan-2014 Rev.A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS3400A provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current (t ≤10s) I D 5.8 A Pulsed Drain Current 1 IDM 30 A Maximum Power Dissipation (t ≤10s) P D 400 mW Thermal Resistance Junction-Ambient 2 R θJA 313 ° C / W Operating Junction & Storage Temperature T J, T STG 150, -55~150 ° C SOT-23 R0 A Top View A L C B D G H JF K E 1 2 A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Top View
5.8A , 30V , R DS(ON) 32 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 06-Jan-2014 Rev.A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Gate-Threshold Voltage 3 V GS(th) 0.7 - 1.4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±12V, VDS =0 Drain-Source Leakage Current I DSS - - 1 µA V DS =24V, V GS =0 Forward Transconductance 3 g fs 8 - - S V DS =5V, I D =5A Diode Forward Voltage 3 V SD - - 1 V I S=1A, V GS =0 - - 32 V DS =10V, I D =5.8A - - 38 V GS =4.5V, I D =5A Static Drain-Source On-Resistance 3 R DS(ON) - - 45 m Ω VGS =2.5V, I D =4A Switching Parameters 4 Total Gate Charge Q g - 9.5 - Gate-Source Charge Q gs - 1.5 - Gate-Drain Change Q gd - 3 - nC ID =5.8A VDS =15V VGS =4.5V Input Capacitance C iss - 1155 - Output Capacitance C oss - 108 - Reverse Transfer Capacitance C rss - 84 - pF VGS =0 VDS =15V f =1.0MHz Turn-on Delay Time T d(on) - 5 - Rise Time Tr - 7 - Turn-off Delay Time T d(off) - 40 - Fall Time Tf - 6 - nS VDS =15V VGS =10V R GEN =3Ω R L=2.7 Ω Gate Resistance R g - - 3.6 Ω V GS = V DS =0, f =1.0MHz Note: 1. Repetitive Rating : Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t < 5 sec. 3. Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
5.8A , 30V , R DS(ON) 32 m ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 06-Jan-2014 Rev.A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES