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220mA, 50V , RDS(ON) 3.5 N-Channel Enhancement MOSFET 28-Apr-2011 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 SOT-23 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating(Matte Tin Finish Annealed over Alloy 42 leadframe) Terminal Connections: See Diagram Weight: 0.008 grams (approximate) MARKING Product Marking Code SMS318 H03 / SS
PACKAGE INFORMATION
SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage(RGS≦20KΩ) VDGR 50 V Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current ID 220 mA Thermal Resistance Rating Power Dissipation 1 P D 300 mW Thermal Resistance, Junction to Ambient1 R θJA 417 °C/W Junction and Storage Temperature Range TJ, TSTG -55~150 °C A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50
220mA, 50V , RDS(ON) 3.5 N-Channel Enhancement MOSFET 28-Apr-2011 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Off Characteristics 2 Drain-Source Breakdown Voltage BV DSS 50 - - V V GS = 0, ID = 250μA Zero Gate Voltage Drain Current I DSS - - 0.5 μA V GS= 0V, VDS = 50V Gate-Body Leakage Current I GSS - - ±100 nA V GS=±20V, VDS = 0V On Characteristics 2 Gate Threshold Voltage V GS(th) 0.5 - 2.0 V V DS = VGS, ID =250μA Static Drain-Source On Resistance R DS(ON) - - 3.5 Ω V GS=10V, ID =0.22A Forward Transconductance g FS 100 - - mS V DS=25V,,ID =0.2A, f=1.0KHz Dynamic Characteristics Input Capacitance C iss - - 50 pF Output Capacitance C oss - - 25 pF Reverse Transfer Capacitance C rss - - 8.0 pF VDS=10V, VGS=0, f=1MHz Switching Characteristics Turn-On Delay Time td (ON) - - 20 Turn-Off Delay Time td (OFF) - - 20 nS VDD=30V, ,ID=0.2A, RGEN=50Ω, Notes: 2. Short duration pulse test us ed to minimize self-heating effect.
220mA, 50V , RDS(ON) 3.5 N-Channel Enhancement MOSFET 28-Apr-2011 Rev. C Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
220mA, 50V , RDS(ON) 3.5 N-Channel Enhancement MOSFET 28-Apr-2011 Rev. C Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE