SMS3009E-C SECOS | Alldatasheet

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Technical content

0.6A, 30V , R DS(O/glyph1197) 700mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 27-Jul-2018 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS3009E-C is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift.

FEATURES

/circle6 Reliable and Rugged /circle6 Green Device Available /circle6 ESD Protection MARKING 3009E

PACKAGE INFORMATION

Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V TA=25°C 0.6 Continuous Drain Current 1, VGS =4.5V TA=70°C ID 0.48 A Pulsed Drain Current 3 IDM 2.4 A Power Dissipation T A=25°C P D 0.35 W Operating Junction & Storage Temperature Range TJ, T STG -55~150 °C Thermal Data Thermal Resistance Junction-Ambient 1 357 Thermal Resistance Junction-Ambient 2 RθJA 500 Thermal Resistance Junction-Case 1 R θJC 250 °C/W Part Number Type SMS3009E-C Lead (Pb)-free and Halogen-free SOT-23 Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0 0.18 B 2.10 3.00 H 0.55 REF. C 1.20 1.80 J 0.08 0.26 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50

0.6A, 30V , R DS(O/glyph1197) 700mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 27-Jul-2018 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(TH) 0.6 - 1.3 V V DS =V GS, ID =250µA Gate-Source Leakage Current I GSS - - ±10 µA V GS = ±12V TJ=25°C - - 1 V DS =24V, V GS =0 Drain-Source Leakage Current TJ=55°C IDSS - - 25 µA VDS =24V, V GS =0 - - 700 V GS =4.5V, I D =200mA - - 1250 V GS =2.5V, I D =100mA Static Drain-Source On-Resistance 4 R DS(ON) - - 2000 mΩ VGS =1.8V, I D =50mA Total Gate Charge Q g - 1.4 - Gate-Source Charge Q gs - 0.32 - Gate-Drain Charge Q gs - 0.46 - nC IDS =0.6A VDS =15V VGS =4.5v Turn-on Delay Time T d(on) - 8.6 - Rise Time Tr - 17.4 - Turn-off Delay Time T d(off) - 16.4 - Fall Time Tf - 16.4 - nS VDD =15V IDS =0.25A VGS =4V RGEN =10Ω Input Capacitance C iss - 41.93 - Output Capacitance C oss - 7.37 - Reverse Transfer Capacitance C rss - 5.33 - pF VGS =0 VDS =15V f=1MHz Source-Drain Diode Continuous Source Current 1 I S - - 0.6 A Pulsed Source Current 3 I SM - - 2.4 A Diode Forward Voltage 4 V SD - 0.85 1.2 V V GS =0, IS=0.3A, TJ=25°C Reverse Recovery Time t rr - 6.7 - nS Reverse Recovery Charge Q rr - 2.1 - nC IF=0.5A, dI/dt=100A/µs TJ=25°C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. Surface mounted on FR4 Board using the minimum recommended pad size. 3. Pulse width limited by maximum junction temperature, Pulse Width ≦300µs, Duty Cycle ≦1%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.

0.6A, 30V , R DS(O/glyph1197) 700mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 27-Jul-2018 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

0.6A, 30V , R DS(O/glyph1197) 700mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 27-Jul-2018 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES