SMS3.3 SEMTECH | Alldatasheet
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Technical content
1 United States Patent No. www.semtech.com PROTECTION PRODUCTS SMS3.3
3.3 Volt TVS Array
For ESD and Latch-Up Protection Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 12A (8/20µs) Protects four I/O lines Working voltage: 3.3V Low leakage current (<1µA) Low clamping voltage Low capacitance (35pF typical) Solid-state EPD TVS technology Description Features Equivalent Circuit Diagram Schematic & PIN Configuration Revision 08/11/04
Applications
Mechanical Characteristics The SMS series of TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD, lightning, and other voltage-induced transient events. Each device will protect up to four lines operating at 3.3 volts. The SMS3.3 is a solid-state device designed specifically for transient suppression. It is constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over traditional pn junction processes. They offer desirable characteristics for board level protection including fast response time, low clamping voltage and no device degradation. The SMS3.3 may be used to meet the immunity require- ments of IEC 61000-4-2, level 4 (±15kV air, ±8kV contact discharge). The low cost SOT23-6L package makes them ideal for use in portable electronics such as cell phones, PDA’s, and notebook computers. SOT23-6L (Top View) EIAJ SOT23-6L package Molding compound flammability rating: UL 94V-0 Marking : Marking Code Packaging : Tape and Reel per EIA 481 Cell phone Handsets and Accessories Microprocessor Based Equipment Personal Digital Assistants (PDA’s) and Pagers Desktops PC and Servers Notebook, Laptop, and Palmtop Computers Portable Instrumentation Peripherals MP3 Players Cordless Phones
2 2004 Semtech Corp. www.semtech.com PROTECTION PRODUCTSPROTECTION PRODUCTS SMS3.3 Absolute Maximum Rating
Electrical Characteristics
3.3SMS retemaraPl obmySs noitidnoC- uminiM m lacipyT- umixaM m -tinU s egatloVffO-dnatSesreveRV MWR 3.3V egatloVhguorhT-hcnuPV TP I TP Aµ2=5 .3V egatloVkcaB-panSV BS I BS Am05=8 .2V tnerruCegakaeLesreveRI R V MWR C°52=T,V3.3=5 0.05 .0A µ egatloVgnipmalCV C I PP sµ02/8=pt,A1= dnuorGotO/IynA 5.4V egatloVgnipmalCV C I PP sµ02/8=pt,A5= dnuorGotO/IynA 8.6V egatloVgnipmalCV C I PP sµ02/8=pt,A21= dnuorGotO/IynA 7.8V egatloVdrawroFedoiDgnireetS )egatloVgnipmalCesreveR( VF I PP sµ02/8=pt,A1= dnuorGotO/IynA 7.1V ecnaticapaCnoitcnuJC j dnanipO/IhcaE dnuorG VR zHM1=f,V0= 530 4F p gnitaRl obmySe ulaVs tinU )sµ02/8=pt(rewoPesluPkaePP kp 002s ttaW )sµ02/8=pt(tnerruCesluPkaePI PP 21A )riA(2-4-00016CEIrepDSE )tcatnoC(2-4-00016CEIrepDSE V DSE 52> 51> Vk erutarepmeTgniredloST L )sdnoces01(062 oC erutarepmeTgnitarepOT J 521+ot55- oC erutarepmeTegarotST GTS 051+ot55- oC
3 2004 Semtech Corp. www.semtech.com PROTECTION PRODUCTSPROTECTION PRODUCTS SMS3.3 100 110 0 25 50 75 100 125 150 Ambient Temperature - T A (oC) % of Rated Power or IPP 0.01 0.1 0.1 1 10 100 1000 Pulse Duration - tp (µs) Peak Pulse Power - PPk (kW) 02468 1 0 1 2 1 4 Forward Current - I F (A) Forward Voltage- VF (V) Waveform Parameters: tr = 8µs td = 20µs 01234 Reverse Voltage - VR (V) Capacitance - Cj (pF) I/O to GND f = 1MHz 0 2 4 6 8 1 01 21 4 Peak Pulse Current - I PP (A) Clamping Voltage - VC (V) Waveform Parameters: tr = 8µs td = 20µs 100 110 0 5 10 15 20 25 30 Time (µs) Percent of I PP e-t td = IPP/2 Waveform Parameters: tr = 8µs td = 20µs
4 2004 Semtech Corp. www.semtech.com PROTECTION PRODUCTSPROTECTION PRODUCTS SMS3.3 SMS3.3 Circuit Diagram Protection of Four Unidirectional Lines Device Connection for Protection of Four Data Lines The SMS3.3 is designed to protect up to four unidirec- tional data lines. The device is connected as follows: 1. Unidirectional protection of four I/O lines is achieved by connecting pins 1, 3, 4 and 6 to the data lines. Pin 2 and 5 are connected to ground. The ground connections should be made directly to the ground plane for best results. The path length is kept as short as possible to reduce the effects of parasitic inductance in the board traces. Circuit Board Layout Recommendations for Suppres- sion of ESD Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: z Place the TVS near the input terminals or connec- tors to restrict transient coupling. z Minimize the path length between the TVS and the protected line. z Minimize all conductive loops including power and ground loops. z The ESD transient return path to ground should be kept as short as possible. z Never run critical signals near board edges. z Use ground planes whenever possible. Matte Tin Lead Finish Matte tin has become the industry standard lead-free replacement for SnPb lead finishes. A matte tin finish is composed of 100% tin solder with large grains. Since the solder volume on the leads is small com- pared to the solder paste volume that is placed on the land pattern of the PCB, the reflow profile will be determined by the requirements of the solder paste. Therefore, these devices are compatible with both lead-free and SnPb assembly techniques. In addition, unlike other lead-free compositions, matte tin does not have any added alloys that can cause degradation of the solder joint. Applications Information
5 2004 Semtech Corp. www.semtech.com PROTECTION PRODUCTSPROTECTION PRODUCTS SMS3.3 Typical Applications
6 2004 Semtech Corp. www.semtech.com PROTECTION PRODUCTSPROTECTION PRODUCTS SMS3.3 Outline Drawing - SO-8 Land Pattern -SOT23 6L Outline Drawing -SOT23 6L .110 BSC .037 BSC DETAIL aaa C SEATING ccc C 2X N/2 TIPS 2X E/2 SEE DETAIL AA2 bxN A .008 N E .060 .114 .063 .118 .010 - A 0.20 1.60 3.00
2.80 BSC
0.95 BSC
.069 1.50 2.90 .020 0.25 1.75 0.50- EI L (L1) c 0.25 PLANE GAGE H 2.80.110 bbb C A-B D .008 .004 .012 .003 (.024) .018 .035 .000 .035 .045 0.10 0.20 10° 0° - 10° 1.15 (0.60) 0.45.024 .009 0.30 0.08 .057 .051 .006 0.00 .90 0.90 0.22 0.60 0.15 1.45 1.30 1.90 BSC.075 BSC A e1 D e B C H NOM INCHES DIMENSIONS aaa bbb ccc N DIM c e L E D b A MIN MILLIMETERS MAX MIN NOM MAX PLANE D DATUMS AND TO BE DETERMINED AT DATUM PLANE CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS3. OR GATE BURRS. NOTES: 2. -A- -B- -H- SIDE VIEW THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. NOTES: DIMENSIONS INCHES Y Z DIM G P X C MILLIMETERS .043 .141 .055 (.098) .037 .024 1.40 (2.50) 0.95 0.60 1.10 3.60 DIMENSIONS INCHES Y Z DIM G P X C MILLIMETERS P (C) Z Y G X
7 2004 Semtech Corp. www.semtech.com PROTECTION PRODUCTSPROTECTION PRODUCTS SMS3.3 Contact Information Semtech Corporation Protection Products Division 200 Flynn Rd., Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 Note: (1) No suffix indicates tube pack. Ordering InformationMarking Tape and Reel Specification Tape Specifications (per EIA 481) Device Orientation in Tape: Top Side Mark Reel Material: Static Dissipative Tape Material: Static Dissipative Tape Width: 8mm +/- 0.30mm Component Pitch (max.): 4mm +/- 0.10mm Component Cavity Play: 20° Direction of Feed rebmuNtraPh siniFdaeL repytQ leeR eziSleeR CT.3.3SMSb PnS0 00,3h cnI7 TCT.3.3SMSe erfbP0 00,3h cnI7