SMS2333_15 SECOS | Alldatasheet
Document overview
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Technical content
-6A , -12V , R DS(ON) 28 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 ID -6 A Pulsed Drain Current (t=300µs) I DM -20 A Maximum Power Dissipation 2 0.35 Maximum Power Dissipation 1 PD 1.1 W Thermal Resistance Junction-Ambient 2 357 Thermal Resistance Junction-Ambient 1 R θJA 113 ° C / W Operating Junction & Storage Temperature T J, T STG 150, -55~150 ° C Note ： 1. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side. 2. Device mounted on no heat sink. SOT-23 S33 Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.17 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50
-6A , -12V , R DS(ON) 28 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS -12 - - V V GS =0, I D = -250 µA Gate-Threshold Voltage 1 V GS(th) -0.4 - -1 V V DS =V GS , I D = -250 µA Gate-Source Leakage Current I GSS - - ±0.1 µA V GS = ±8V, VDS =0 Drain-Source Leakage Current I DSS - - -1 µA V DS = -12V, V GS =0 Forward Tranconductance 1 g fs - 18 - S V DS = -5V, I D = -5A Static Drain-Source On-Resistance 1 R DS(ON) - - 150 m Ω VGS = -1.5V, I D = -0.5A Dynamic Parameters 2 Total Gate Charge Q g - 14 - Gate-Source Charge Q gs - 2.3 - Gate-Drain Change Q gd - 3.6 - nC ID = -5A VDS = -6V VGS = -4.5V Input Capacitance C iss - 1275 - Output Capacitance C oss - 255 - Reverse Transfer Capacitance C rss - 236 - pF VGS =0 VDS = -6V f =1.0MHz Gate Resistance R g 1.9 - 19 Ω f =1.0MHz Turn-on Delay Time T d(on) - 26 - Rise Time Tr - 24 - Turn-off Delay Time T d(off) - 45 - Fall Time Tf - 20 - nS VDD = -6V VGEN = -4.5V ID = -4A R GEN =1Ω R L=6Ω Source-Drain Diode Forward Current I S - - -1.4 A T C = 25° C Pulsed Forward Current I SM - - -20 A Forward Voltage 1 V DS - - -1.2 V V GS =0, IS= -4A Reverse Recovery Time 2 T rr - 24 48 nS Reverse Recovery Charge 2 Q rr - 8 16 nC IF= -4A, dl/dt=100A/ µs Note: 1. Pulse Test : Pulse width ≦300µs, duty cycle ≦2%. 2. Guaranteed by design, not subject to production testing.
-6A , -12V , R DS(ON) 28 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 27-Jun-2014 Rev.A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES