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3A, 60V , RDS(ON) 105m N-Channel Enhancement MOSFET 18-Dec-2014 Rev. B Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 SOT-23 S10 Top View RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage APPLICATION Battery Switch DC/DC Converter MARKING
PACKAGE INFORMATION
SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 60 V Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current ID 3 A Pulsed Drain Current 1 I DM 10 A Power Dissipation P D 0.35 W Thermal Resistance, Junction to Ambient 2 R θJA 357 °C/W Junction and Storage Temperature Range TJ, TSTG 150, -55~150 °C A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50
3A, 60V , RDS(ON) 105m N-Channel Enhancement MOSFET 18-Dec-2014 Rev. B Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions STATIC CHARACTERISTICS Drain-Source Breakdown Voltage V (BR)DSS 60 - - V V GS = 0, ID = 250μA Gate-Body Leakage Current I GSS - - ±100 nA V GS=±20V, VDS =0 Zero Gate Voltage Drain Current I DSS - - 1 μA V GS=0, VDS =60V Gate Threshold Voltage 3 V GS(th) 0.5 - 2 V V DS = VGS, ID = 250μA - - 105 V GS=10V, ID =3A Static Drain-Source On Resistance 3 R DS(ON) - - 125 mΩ VGS=4.5V, ID =3A Forward Transconductance 3 g FS 1.4 - - S V DS=15V,ID =2A Body diode forward voltage 3 V SD - - 1.2 V VGS=0, IS =3A Dynamic Characteristics 4 Input Capacitance C iss - 247 - Output Capacitance C oss - 34 - Reverse Transfer Capacitance C rss - 19.5 - pF VDS=30V, VGS=0, f=1MHz Switching Characteristics4 Turn-On Delay Time td (ON) - 6 - Rise time tr - 15 - Turn-Off Delay Time td (OFF) - 15 - Fall time tr - 10 - nS VDD=30V, VGS=10V, ID=1.5A, RGEN=1Ω, Total Gate Charge Qg - 6 - Gate-Source Charge Qgs - 1 - Gate-Drain Charge Qgd - 1.3 - nC ID= 3A VDS= 30V VGS= 4.5V Notes: 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t ≤10s. 3. Pulse Test : Pulse Width ≤300µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting.
3A, 60V , RDS(ON) 105m N-Channel Enhancement MOSFET 18-Dec-2014 Rev. B Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES