SMS2301 SECOS | Alldatasheet
Document overview
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Technical content
-3.1A , -20V , R DS(ON) 75m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 01-Mar-2017 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2301 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide Excellent R DS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2301 meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super low Gate Charge /circle6 Green Device Available MARKING
PACKAGE INFORMATION
(T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Continuous Gate-Source Voltage V GS ±12 V TA=25° C -3.1 Continuous Drain Current 1, V GS @ -4.5V TA=70° C ID -2.5 A Pulsed Drain Current 2 IDM -15.5 A Total Power Dissipation 1 T A=25° C P D 1 W Operating Junction & Storage Temperature Range TJ, T STG 150, -55~150 ° C Thermal Resistance Rating t≦5sec 125 Thermal Resistance from Junction to Ambient 1 Steady State 250 Thermal Resistance from Junction to Ambient R θJA 300 ° C/W SOT-23 A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50
-3.1A , -20V , R DS(ON) 75m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 01-Mar-2017 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Characteristics Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D = -250 µA TJ=25° C - - -1 Drain-Source Leakage Current TJ=55° C IDSS - - -5 µA V GS =0, V DS = -16V Gate-Source Leakage Current I GSS - - ±100 nA V GS =±12V, V DS =0 Gate-Source Threshold Voltage V GS(th) -0.5 - -1.2 V V DS =V GS , I D = -250 µA Static Drain-Source On Resistance 3 R DS(ON) - - 105 m Ω VGS = -2.5V, I D = -2A Forward Transfer Conductance g FS - 9 - S V DS = -5V, ID = -3A Total Gate Charge Q g - 9.7 - Gate-Source Charge Q gs - 2.05 - Gate-Drain (“Miller”) Charge Q gd - 2.43 - nC VDS = -15V VGS = -4.5V ID = -3A Turn-On Delay Time T d(ON) - 4.8 - Rise Time Tr - 9.6 - Turn-Off Delay Time T d(OFF) - 52 - Fall Time Tf - 8.4 - nS ID = -3A VDS = -10V VGS = -4.5V R G =3.3 Ω Input Capacitance C iss - 686 - Output Capacitance C oss - 90.8 - Reverse Transfer Capacitance C rss - 80.4 - pF VDS = -15V VGS =0 f=1MHz Source Drain Diode Continuous Source Current 1 I S - - -3.1 Pulsed Source Current 2 I SM - - -15.5 A Forward On Voltage 3 V SD - -0.7 -1.2 V I S = -1A, V GS =0 Reverse Recovery Time t rr - 8.4 - nS Reverse Recovery Charge Q rr - 3.3 - nC IF= -3A, dl/dt=100A/uS, T J=25° C Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2oz copper. 2. The power dissipation is limited by 150° C junction temperature. 3. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%.
-3.1A , -20V , R DS(ON) 75m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 01-Mar-2017 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVE
-3.1A , -20V , R DS(ON) 75m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 01-Mar-2017 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TYPICAL CHARACTERISTIC CURVE