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830mA, 20V N-Channel MOSFET 21-May-2013 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Top View A L C B D G H JF K E 1 2 W28  = Date Code RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS2020 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage APPLICATION  DC-DC converter circuit  Load Switch DEVICE MARKING:

PACKAGE INFORMATION

MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Rating Parameter Symbol 10S Steady State Unit Drain – Source Voltage V DS 20 V Gate – Source Voltage V GS ±6 V TA= 25°C 0.9 0.83 Continuous Drain Current 1 TA= 70°C ID 0.72 0.66 A TA= 25°C 0.38 0.32 Power Dissipation 1 TA= 70°C PD 0.24 0.2 W TA= 25°C 0.79 0.71 Continuous Drain Current 2 TA= 70°C ID 0.63 0.57 A TA= 25°C 0.29 0.24 Power Dissipation 2 TA= 70°C PD 0.19 0.15 W Pulsed Drain Current 3 I DM 1.4 A Maximum Junction-to-Lead R θJL 260 °C / W Operating Junction & Storage Temperature Range T J, TSTG 150, -55~150 °C SOT-23 A 2.70 3.04 G - 0.18 B 2.10 2.80 H 0.40 0.60 C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50

830mA, 20V N-Channel MOSFET 21-May-2013 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. THERMAL RESISTANCE RATINGS Note: 1. Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper. 2. Surface mounted on FR4 board us ing minimum pad size, 1oz copper 3. Repetitive rating, pulse width limited by junction temperature, tp=10 μs, Duty Cycle=1% 4. Repetitive rating, pulse width limited by junction temperature T J=150°C. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage V (BR)DSS 20 - - V V GS=0, ID=250μA Zero Gate Voltage Drain Current I DSS - - 1 μA V DS=16V, VGS=0 Gate-Source Leakage I GSS - - ±5 μA V DS=0 , VGS= ±5V Gate-Threshold Voltage V GS(TH) 0.45 0.58 0.85 V V DS=VGS, ID=250μA - 220 310 V GS=4.5V, ID=0.55A - 260 360 V GS=2.5V, ID=0.45A Drain-Source On Resistance R DS(ON) - 320 460 mΩ VGS=1.8V, ID=0.35A Forward Transconductance g FS - 2 - S V DS=5V, ID= 0.55A Body-Drain Diode Ratings Diode Forward On–Voltage V SD 0.5 0.7 1.5 V I S=350mA, VGS=0 Dynamic Characteristics Input Capacitance C ISS - 50 - Output Capacitance C OSS - 13 - Reverse Transfer Capacitance C RSS - 8 - pF VDS=10V, VGS=0, f=100KHz Total Gate Charge Q G(TOT) - 1.15 - Threshold Gate Charge Q G(TH) - 0.06 - Gate-to-Source Charge Q GS - 0.15 - Gate-to-Drain Charge Q GD - 0.23 - nC VDS=10V, VGS=4.5V, ID=0.55A Turn-on Delay Time T d(ON) - 22 - Rise Time T r - 80 - Turn-off Delay Time T d(OFF) - 700 - Fall Time T f - 380 - nS VDD=10V, I D=0.55A, VGS=4.5V, RG=6Ω. Rating Parameter Symbol Typ. Max. Unit Single Operation T≦10S 270 325 Junction-to-Ambient Thermal Resistance 1 Steady State RθJA 320 385 T≦10S 360 420 Junction-to-Ambient Thermal Resistance 2 Steady State RθJA 425 520 Junction-to-Case Thermal Resistance Steady State R θJC 260 300 °C / W

830mA, 20V N-Channel MOSFET 21-May-2013 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

830mA, 20V N-Channel MOSFET 21-May-2013 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES