SMS2001-C SECOS | Alldatasheet
Document overview
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Technical content
-2A, -20V , R DS(O/glyph1197) 200mΩ P-Channel Enhancement Mode Power MOSFET 07-Dec-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2001-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the small power switching and load switch applications. The SMS2001-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge MARKING
PACKAGE INFORMATION
Parameter Symbol Ratings Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V TA =25°C -2 Continuous Drain Current, @VGS = -4.5V 1 TA =70°C ID -1.6 A Pulsed Drain Current 3 IDM -8 A Power Dissipation TA =25°C P D 1 W Operating Junction & Storage Temperature TJ, T STG -55~150 °C Thermal Resistance Ratings t≦5sec, 125 Thermal Resistance Junction-ambient 1 Steady State, 250 Thermal Resistance Junction-ambient 2 RθJA 415 °C/W Part Number Type SMS2001-C Lead (Pb)-free and Halogen-free SOT-23 2001 Top View A L C B D G H JF K E 1 2 11 11 22 22 33 33 A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50
-2A, -20V , R DS(O/glyph1197) 200mΩ P-Channel Enhancement Mode Power MOSFET 07-Dec-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -20 - - V V GS =0, I D = -250µA Gate-Threshold Voltage V GS(th) -0.45 - -1 V V DS =V GS , I D = -250µA Forward Tranconductance g fs - 3.4 - S V DS = -5V, I D = -2A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±8V TJ=25°C - - -1 Drain-Source Leakage Current TJ=55°C IDSS - - -10 µA V DS = -16V, V GS =0 - 150 200 V GS = -4.5V, I D = -2A Static Drain-Source On-Resistance 3 R DS(ON) - 200 280 mΩ VGS = -2.5V, I D = -1.5A Total Gate Charge 3 Q g - 4.6 - Gate-Source Charge Q gs - 0.27 - Gate-Drain (“Miller”) Change Q gd - 2.34 - nC ID = -2A VDS = -20V VGS = -4.5V Turn-on Delay Time 3 T d(on) - 11.6 - Rise Time Tr - 6.2 - Turn-off Delay Time T d(off) - 31.8 - Fall Time Tf - 2.8 - nS VDS = -12V VGS = -4.5V ID = -1A RG =3.3Ω Input Capacitance C iss - 194 - Output Capacitance C oss - 35.5 - Reverse Transfer Capacitance C rss - 28.2 - pF VGS =0 VDS = -15V f=1MHz Source-Drain Diode Forward on Voltage 4 V SD - -0.85 -1.2 V I S= -1A, V GS =0 Continuous Source Current 1 I S - - -2 Pulsed Source Current 3 I SM - - -8 A Notes: 1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, Pulse Width≤10µs, Duty Cycle≤1%. 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.
-2A, -20V , R DS(O/glyph1197) 200mΩ P-Channel Enhancement Mode Power MOSFET 07-Dec-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
-2A, -20V , R DS(O/glyph1197) 200mΩ P-Channel Enhancement Mode Power MOSFET 07-Dec-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES