SMS1520NE-C SECOS | Alldatasheet

Document overview

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Technical content

6.5A, 20V , R DS(O/glyph1197) 20mΩ /glyph1197-Channel Enhancement MOSFET 21-Dec-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SOT -23 RoHS Compliant Product A suffix of “-C” specifies halogen & lead are free

FEATURES

/circle6 20V/6.5A R DS(ON) ≦20MΩ @V GS =4.5V RDS(ON) 2≦ 6mΩ @V GS =2.5V /circle6 ESD Protection /circle6 Reliable and Rugged /circle6 Green Device Available APPLICATION Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. MARKING 1520NE

PACKAGE INFORMATION

Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA=25°C 6.5 Continuous Drain Current 1, @V GS =4.5V TA=70°C ID A Pulsed Drain Current 3 IDM 20 A Power Dissipation T A=25°C P D 1.4 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings t 10sec≦ 90 Thermal Resistance Junction-ambient 1 Steady State 178 Thermal Resistance Junction-ambient 2 RθJA 357 °C/W Part Number Type SMS1520NE-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 ESD Protection Diode A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50

6.5A, 20V , R DS(O/glyph1197) 20mΩ /glyph1197-Channel Enhancement MOSFET 21-Dec-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(th) 0.3 - 1 V V DS=VGS, ID =250µA Gate- Source Leakage Current I GSS - - ±10 µA V GS = ±12V TJ=25°C - - 1 Drain-Source Leakage Current TJ=85°C IDSS - - 30 µA V DS =16V, V GS =0 - - 20 V GS =4.5V, ID =5A Static Drain-Source On-Resistance 4 R DS(ON) - - 26 mΩ VGS =2.5V, ID =2.5A Total Gate Charge Q g - 14.7 - Gate-Source Charge Q gs - 2 - Gate-Drain Change Q gd - 4.4 - nC IDS =5A VDS =10V VGS =4.5V Turn-on Delay Time T d(on) - 6 - Rise Time Tr - 11 - Turn-off Delay Time T d(off) - 58 - Fall Time Tf - 29 - nS VDD =10V IDS =1A VGS =4.5V RGEN =6Ω RL =10Ω Input Capacitance C iss - 1050 - Output Capacitance C oss - 170 - Reverse Transfer Capacitance C rss - 145 - pF VGS =0 VDS =10V f=1MHz Source-Drain Diode Continuous Source Current 1 IS - - 1 Pulsed Source Current 3 ISM - - 20 A Forward On Voltage 4 V SD - - 1.2 V I S =1A, VGS =0 Notes: 1. Surface Mounted on 1”x1” FR4 Board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, Pulse Width≤300µs, Duty Cycle≤1%. 4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%.

6.5A, 20V , R DS(O/glyph1197) 20mΩ /glyph1197-Channel Enhancement MOSFET 21-Dec-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

6.5A, 20V , R DS(O/glyph1197) 20mΩ /glyph1197-Channel Enhancement MOSFET 21-Dec-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES