SMS123 SECOS | Alldatasheet
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Technical content
0.17A, 100V , R DS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET 28-Apr-2017 Rev. C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTIONS The SMS123 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use in DC-DC conversion, load switch and level shift. MECHANICAL DATA /circle6 Trench Technology /circle6 Supper high density cell design /circle6 Excellent ON resistance /circle6 Extremely Low Threshold Voltage APPLICATION /circle6 DC-DC converter circuit /circle6 Load Switch MARKING
PACKAGE INFORMATION
(T A = 25° C unless otherwise specified) Parameter Symbol Rating Unit Drain – Source Voltage VDS 100 V Gate – Source Voltage VGS ±20 V Continuous Drain Current 1 I D 0.17 A Pulsed Drain Current(tp=10 µs) I DM 0.68 A Continuous Source-Drain Diode Current I S 0.17 A Power Dissipation PD 0.35 W Thermal Resistance from Junction to Ambient 1 R θJA 357 ° C / W Lead Temperature for Soldering Purposes (1/8’’ from case for 10s) T L 260 ° C Operating Junction & Storage Temperature Range T J, T STG 150, -55~150 ° C SOT-23 B123 Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.09 0.18 B 2.10 2.65 H 0.35 0.65 C 1.20 1.40 J 0.08 0.20 D 0.89 1.17 K 0.6 REF. E 1.78 2.04 L 0.95 BSC. F 0.30 0.50
0.17A, 100V , R DS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET 28-Apr-2017 Rev. C Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Characteristics Drain-Source Breakdown Voltage V (BR)DSS 100 - - V V GS =0V, I D =250 µA - - 1 µA V DS =100V, V GS =0V Zero Gate Voltage Drain Current I DSS - - 10 nA V DS =20V, V GS =0V Gate-Source Leakage I GSS - - ±50 nA V DS =0V, V GS = ±20V Gate-Threshold Voltage 2 V GS(TH) 1 1.6 2.8 V V DS =V GS, ID =250 µA - - 6 V GS =10V, I D =0.17A Drain-Source On Resistance 2 R DS(ON) - - 10 Ω VGS =4.5V, I D =0.17A Forward Transfer conductance 2 g FS 80 - - mS V DS =10V, ID = 0.17A Body-Drain Diode Ratings Diode Forward On–Voltage V SD - - 1.3 V I S=340mA, V GS =0V Dynamic Characteristics Input Capacitance C ISS - 29 41 Output Capacitance C OSS - 10 14 Reverse Transfer Capacitance C RSS - 2 2.8 pF VDS =25V, VGS =0V, f=1MHz Switching Characteristics 3 Total Gate Charge Q G(TOT) - 1.4 - Gate-to-Source Charge Q GS - 0.15 - Gate-to-Drain Charge Q GD - 0.2 - nC VDS =10V, VGS =10V, ID =0.22A Turn-on Delay Time T d(ON) - 8 - Rise Time Tr - 8 - Turn-off Delay Time T d(OFF) - 13 - Fall Time Tf - 16 - nS VDD =30V, I D =0.28A, VGS =10V, R GEN =50 Ω Notes: 1. Surface mounted on FR4 Board using the minimum recommended pad size. 2. Pulse Test : Pulse width=300 µs, duty cycle ≦2％ 3. Switching characteristics are independent of operating junction temperature.
0.17A, 100V , R DS(ON) 6Ω N-Ch Enhancement Mode Power MOSFET 28-Apr-2017 Rev. C Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES