SMS0610 SECOS | Alldatasheet
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Features
- Rugged And Reliable * SOT-23 Package * Super High Dense Cell Design For Low R DS(ON) RoHS Compliant Product http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S 01-Jun-2002 Rev. A Page 1 of 5 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm SOT-23 SMS0610 -0.185A, -60V,RDS(ON) 7.5 P-Channel Enhancement Mode Power Mos.FET Ω
Electrical Characteristics( Tj=25 C Unless otherwise specified) o RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) IGSS IDSS Crss Td(ON) Td(Off) Tr Ciss Coss Tf -60 7.5 2.8 6.5 7.2 V V uA uA nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDD=-25V ID=-120mA VGS=-10V RG=6 Ω VGS=-10V, ID=-0.5A VGS=-4.5V, ID=-0.025A VGS=0V, ID=-10uA VGS= ±20V,VDS=0V VDS=-60V,VGS=0 VDS=VGS, ID=-250uA Forward On Voltage VSD -0.75_ ID=-200mA, VGS=0V.V-1.4 Forward Transconductance Gfs mS430 VDS=-10V, ID=-0.1A_ Co On-State Drain Current ID(ON) 600 _ _ mA VDS=-10V,VGS=-10V Notes: 1.Surface mounted on FR4 board; t 1 0 s e c . Guaranteed by design, not subject to production testing. 2.Pulse width 300us, dutycycle 2%.≦≦ http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 5 Elektronische Bauelemente SMS0610 -0.185A, -60V,RDS(ON) 7.5 P-Channel Enhancement Mode Power Mos.FET Ω