SMS015N07A1

SMS015N07A1 SILIKRON | Alldatasheet

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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 1 of 5 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC =25°C ContinuousDrainCurrent,VGS @ 10V① 240 AID@TC =100°C ContinuousDrainCurrent,VGS @ 10V① 185 IDM PulsedDrainCurrent② 720 PD @TC =25°C PowerDissipation③ 272 W VDS Drain-SourceVoltage 150 V VGS Gate-to-SourceVoltage ±20 V EAS SinglePulseAvalancheEnergy@L=0.5mH 1024 mJ IAS AvalancheCurrent 64 A TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 150V RDS(on) 4.8mΩ(typ.) ID 240A SchematicDiagram  AdvancedMOSFETprocesstechnology  Special designed for PWM, load switching and generalpurposeapplications  Ultralowon-resistancewithlowgatecharge  Fastswitchingandreversebodyrecovery  150℃ operatingtemperature TO-220 SMS015N07A1 Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. TO-263 SMS015N07D1

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 2 of 5 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 0.46 ℃/W RθJA Junction-to-ambient④ — 62 Electrical Characteristics @TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 150 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 4.8 5.8 mΩ VGS=10V,ID=40A VGS(th) Gatethresholdvoltage 1 — 2.5 V VDS=VGS,ID=250uA IDSS Drain-to-SourceleakagecurrentTj=25°C — — 1 μA VDS=140V,VGS=0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS=20V,VDS=0V — — -100 VGS=-20V,VDS=0V Qg Totalgatecharge — 66 — nC VGS=10V, VDS=75V, ID=70A Qgs Gate-to-Sourcecharge — 21 — Qgd Gate-to-Drain("Miller")charge — 20 — td(on) Turn-ondelaytime — 18 — ns VGS=10V VDS=75V RG=3Ω RL=1.07Ω tr Risetime — 21 — td(off) Turn-Offdelaytime — 36 — tf Falltime — 10 — Ciss Inputcapacitance — 4196 — pF VGS=0V VDS=25V f=1MHz Coss Outputcapacitance — 2875 — Crss Reversetransfercapacitance — 210 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 240 A MOSFETsymbol showingthe integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 720 A VSD DiodeForwardVoltage — — 1.2 V IS=20A,VGS=0V trr ReverseRecoveryTime — 101 — ns IF=20A,dI/dt=500A/μs Qrr ReverseRecoveryCharge — 1240 — nC

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 3 of 5 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PD is based onmax.junction temperature,using junction-to-casethermal resistance. ④Thevalue ofRθJA is measuredwith the devicemounted on 1in2FR-4 board with 2oz. Copper,in a still airenvironmentwith TA =25°C.

©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 4 of 5 Mechanical Data： Product ID Package SMS015N07A1 TO-220 SMS015N07D1 TO-263 Unit:mm

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