SMS006N09C1 SILIKRON | Alldatasheet
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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 1 of 5 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC =25°C ContinuousDrainCurrent,VGS @ 10V① 60 AID @TC =100°C ContinuousDrainCurrent,VGS @ 10V① 40 IDM PulsedDrainCurrent② 240 PD @TC =25°C PowerDissipation③ 85 W VDS Drain-SourceVoltage 60 V VGS Gate-to-SourceVoltage ±20 V TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 60V RDS(on) 8.8mΩ(typ.) ID 60A TO-252 SchematicDiagram AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications. D G S
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 2 of 5 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case③ — 1.76 ℃/W Electrical Characterizes @TA=25℃ unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 60 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 8.8 12 mΩ VGS=10V,ID =45A — 12 17 mΩ VGS=4.5V,ID =45A VGS(th) Gatethresholdvoltage 1 — 2.5 V VDS =VGS,ID =250μA IDSS Drain-to-Sourceleakagecurrent — — 1 μA VDS =60V,VGS =0V IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS =20V — — -100 VGS =-20V Ciss Inputcapacitance — 2105 — pF VGS =0V VDS =30V ƒ=1MHz Coss Outputcapacitance — 360 — Crss Reversetransfercapacitance — 13 — Qg Totalgatecharge — 37 — nC ID =45A, VDS=30V, VGS =10V Qgs Gate-to-Sourcecharge — 6.8 — Qgd Gate-to-Drain("Miller")charge — 5.9 — td(on) Turn-ondelaytime — 8 — ns VGS=10V,VDS =30V, RGEN=4.7Ω,ID =45A tr Risetime — 2 — td(off) Turn-Offdelaytime — 30 — tf Falltime — 4 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 60 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 240 A VSD DiodeForwardVoltage — — 1.2 V IS=30A,VGS=0V trr ReverseRecoveryTime — 38 — ns TJ = 25°C, IF = IS, di/dt = 100A/μsQrr ReverseRecoveryCharge — 48 — nC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 3 of 5 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PD is based onmax.junction temperature,using junction-to-casethermal resistance.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 4 of 5 Mechanical Data：
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: Preliminary page 5 of 5 ATTENTION: ■ AnyandallSilikronproductsdescribedorcontainedhereindonothavespecificationsthatcanhandleapplications thatrequireextremelyhighlevelsofreliability,suchaslife-supportsystems,aircraft'scontrolsystems,orother applicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage. ConsultwithyourSilikronrepresentativenearestyoubeforeusinganySilikronproductsdescribedorcontained hereininsuchapplications. ■ Silikronassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed, evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallSilikronproductsdescribedorcontainedherein. ■ SpecificationsofanyandallSilikronproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomer shouldalwaysevaluateandtestdevicesmountedinthecustomer’sproductsorequipment. ■ SilikronMicroelectronics(Suzhou)Co.,Ltd.strivestosupplyhigh-qualityhigh-reliabilityproducts.However,anyand allsemiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverise to accidentsoreventsthatcouldendangerhumanlives,thatcouldgiverisetosmokeorfire,orthatcouldcause damagetootherproperty.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsor eventscannotoccur.Suchmeasuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsfor safedesign,redundantdesign,andstructuraldesign. ■ IntheeventthatanyorallSilikronproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexported withoutobtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. ■ Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofSilikronMicroelectronics(Suzhou)Co.,Ltd. ■ Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction.Silikronbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. ■ Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticedueto product/technologyimprovement,etc.Whendesigningequipment,refertothe"DeliverySpecification"forthe Silikronproductthatyouintendtouse.