SMS004N03A1 SILIKRON | Alldatasheet
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©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 1 of 5 MainProductCharacteristics: FeaturesandBenefits: Description: Absolute Max Rating: Symbol Parameter Max. Units ID@TC =25°C ContinuousDrainCurrent,VGS @ 10V① 140 A IDM PulsedDrainCurrent② 560 PD @TC =25°C PowerDissipation③ 83 W VDS Drain-SourceVoltage 40 V VGS Gate-to-SourceVoltage ±20 V TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+150 °C VDSS 40V RDS(on) 1.65mΩ(typ.) ID 140A SchematicDiagram TO-220 SMS004N03A1 AdvancedMOSFETprocesstechnology Special designed for PWM, load switching and generalpurposeapplications Ultralowon-resistancewithlowgatecharge Fastswitchingandreversebodyrecovery 150℃ operatingtemperature TO-263 SMS004N03D1 Itutilizesthelatestprocessingtechniquestoachievethehighcelldensityandreducestheon-resistancewith highrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficientandreliable deviceforuseinpowerswitchingapplicationandawidevarietyofotherapplications.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 2 of 5 Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case③ — 1.5 ℃/W RθJA Junction-to-ambient④ — 20 Electrical Characteristics @TA=25℃unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Sourcebreakdownvoltage 40 — — V VGS =0V,ID =250μA RDS(on) StaticDrain-to-Sourceon-resistance — 1.65 2.3 mΩ VGS=10V,ID=20A — 2.45 3.2 VGS=4.5V,ID=20A VGS(th) Gatethresholdvoltage 1 — 2.5 V VDS=VGS,ID=250uA IDSS Drain-to-SourceleakagecurrentTj=25°C — — 1 μA VDS=40V,VGS=0V, IGSS Gate-to-Sourceforwardleakage — — 100 nA VGS=20V,VDS=0V — — -100 VGS=-20V,VDS=0V Qg Totalgatecharge — 67 — nC VGS=10V, VDS=32V, ID=10A Qgs Gate-to-Sourcecharge — 13.7 — Qgd Gate-to-Drain("Miller")charge — 12.7 — td(on) Turn-ondelaytime — 893 — ns VDS=20V RG=10Ω RD=0.5Ω tr Risetime — 22 — td(off) Turn-Offdelaytime — 75 — tf Falltime — 35 — Ciss Inputcapacitance — 3835 — pF VGS=0V VDS=25V f=1MHz Coss Outputcapacitance — 2795 — Crss Reversetransfercapacitance — 475 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS ContinuousSourceCurrent (BodyDiode) — — 140 A MOSFETsymbol showing the integralreverse p-njunctiondiode. ISM PulsedSourceCurrent (BodyDiode) — — 560 A VSD DiodeForwardVoltage — — 0.78 V IS=20A,VGS=0V trr ReverseRecoveryTime — 31 — ns IF=IS,dI/dt=100A/μs Qrr ReverseRecoveryCharge — 110 — nC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 3 of 5 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①Calculated continuouscurrentbased on maximumallowablejunction temperature. ②Repetitive rating;pulse widthlimitedby max.junction temperature. ③Thepower dissipation PD is based onmax.junction temperature,using junction-to-casethermal resistance. ④Thevalue ofRθJA is measuredwith the devicemounted on 1in2FR-4 board with 2oz. Copper,in a still airenvironmentwith TA =25°C.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version : Preliminary page 4 of 5 Mechanical Data： Product ID Pack SMS004N03A1 TO-220 SMS004N03D1 TO-263 Unit:mm
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