SMP3003

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Technical content

Features

• ON-resistance R DS(on)1=6.2mΩ (typ.) • 4V drive
• Input capacitance Ciss=13400pF (typ.) Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS - -75 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D - -100 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -400 A Allowable Power Dissipation P D Tc=25°C 90 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Avalanche Energy (Single Pulse) *1 E AS 468 mJ Avalanche Current *2 I AV - -60 A Note : *1 VDD=- -48V , L=100μH, IAV=- -60A (Fig.1) *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -75 V Zero-Gate Voltage Drain Current I DSS V DS=- -75V, VGS=0V - -10 μA Gate to Source Leakage Current I GSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=- -10V, ID=- -1mA - -1.2 - -2.6 V Forward Transfer Admittance | yfs | VDS=- -10V, ID=- -50A 140 S Static Drain to Source On-State Resistance RDS(on)1 I D=- -50A, VGS=- -10V 6.2 8.0 m Ω RDS(on)2 I D=- -50A, VGS=- -4V 8.0 11 m Ω Input Capacitance Ciss VDS=- -20V, f=1MHz 13400 pF Output Capacitance Coss 1000 pF Reverse Transfer Capacitance Crss 740 pF Turn-ON Delay Time td(on) See Fig.2 95 ns Rise Time tr 1000 ns Turn-OFF Delay Time td(off) 800 ns Fall Time tf 820 ns Total Gate Charge Qg VDS=- -48V, VGS=- -10V, ID=- -100A 280 nC Gate to Source Charge Qgs 50 nC Gate to Drain “Miller” Charge Qgd 55 nC Diode Forward Voltage VSD IS=- -100A, VGS=0V - -1.0 - -1.5 V Reverse Recovery Time trr See Fig.3 IS=- -100A, VGS=0V, di/dt=- -100A/μs 120 ns Reverse Recovery Charge Qrr 380 nC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of this data sheet. TO-263

No. A1655-2/6 Drain to Source V oltage, VDS -- V Drain Current, ID -- A Gate to Source V oltage, VGS -- V Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- mΩ Case Temperature, Tc -- °C Static Drain to Source On-State Resistance, RDS(on) -- mΩ Drain Current, ID -- A Diode Forward V oltage, VSD -- V Source Current, IS -- A Gate to Source V oltage, VGS -- V ID -- VDS ID -- VGS RDS(on) -- TcRDS(on) -- VGS IS -- VSD| yfs | -- ID Forward Transfer Admittance, | yfs | -- S IT16502 IT16499 --50 --25 150 IT17198IT16503 --0.1 --1.023 5 7 100 1000 --0.01 --0.1 --1.0 --10 --100 --1000 0.1 1.0 2 --1035 7 --1005723 0 25 50 75 100 125 Tc= --25 --25 °CTc=75 ID= --50A Single pulse Single pulse Tc=75°C 25°C --25°C Tc= --25 25°C 75°C VDS= --10V Tc=75 --25 VGS=0V Single pulse --20 --40 --200 --180 --160 --140 --120 --100 --80 --60 --20 --40 --200 --180 --160 --140 --120 --100 --80 --60 IT16501 IT16500 Tc=25°C --4V VGS= --3V --10V VDS= --10V VGS= --4V , I D= --50A VGS= --10V , ID= --50A --8V --6V Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- VDS 100 1000 IT16505 10000 100000 Ciss Crss Coss f=1MHz SW Time -- ID Drain Current, ID -- A Switching Time, SW Time -- ns IT14179 100 1000 td(off) VDD= --48V VGS= --10V tr tf td(on)

No. A1655-3/6 25 50 75 100 125 150 100 120 175 EAS -- Ta Avalanche Energy derating factor -- % Ambient Temperature, Ta -- °C IT14184IT15361 A S O Drain to Source V oltage, VDS -- V Drain Current, ID -- A PD -- Tc Allowable Power Dissipation, PD -- W Case Temperature, Tc -- °C 20 40 60 80 100 140 120 100 160 IT15360 --0.1 --1.0 --10 --0.1 IDP= --400A(PW≤10μs) ID= --100A 100 μs1ms 10ms100msDC operation Operation in this area is limited by RDS(on). --1.023 5 7 2 --10 --10035 7 2 2 35 7 10μs --100 --1000 Tc=25°C Single pulse Total Gate Charge, Qg -- nC Gate to Source V oltage, VGS -- V VGS -- Qg 0 50 200 150 250100 350 300 --2 --4 --6 --1 --3 --5 --8 --7 --9 --10 VDS= --48V ID= --100A IT16506

No. A1655-4/6 Package Dimensions SMP3003-DL-1E D2PAK/TO-263-2L CASE 418AP ISSUE O Unit : mm 1: Gate 2: Drain 3: Source 4: Drain Land Pattern Example Packing Type: DL Electrical Connection 2, 4 DL

No. A1655-5/6 Package Dimensions SMP3003-TL-1E Unit : mm 1: Gate 2: Drain 3: Source 4: Drain Land Pattern Example Packing Type: TL Electrical Connection 2, 4 TL

PS No. A1655-6/6 Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Ordering & Package Information Marking Device Package Shipping memo SMP3003-DL-1E TO-263-2L SC-83, TO-263 800 pcs./reel Pb-Free SMP3003-TL-1E TO-263 Fig.1 Unclamped Inductive Switching Test Circuit Fig.2 Switching Time Test Circuit Fig.3 Reverse Recovery Time Test Circuit MP3003 LOT No. 50Ω0V --10V ≥50Ω RG VDD L SMP3003 G S D PW=10μs D.C.≤1% P. G 50Ω G S D ID= --50A RL=0.96Ω VDD= --48V VOUT VIN --10V VIN SMP3003 VDD SMP3003 L Driver MOSFET G S D