SMOS44N50D2 SIRECTIFIER | Alldatasheet
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SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Dim. Millimeter Inches Min. Max. Min. Max. A 31.50 31.88 1.240 1.255 B 7.80 8.20 0.307 0.323 C 4.09 4.29 0.161 0.169 D 4.09 4.29 0.161 0.169 E 4.09 4.29 0.161 0.169 F 14.91 15.11 0.587 0.595 G 30.12 30.30 1.186 1.193 H 37.80 38.20 1.489 1.505 J 11.68 12.22 0.460 0.481 K 8.92 9.60 0.351 0.378 L 0.76 0.84 0.030 0.033 M 12.60 12.85 0.496 0.506 N 25.15 25.42 0.990 1.001 O 1.98 2.13 0.078 0.084 P 4.95 5.97 0.195 0.235 Q 26.54 26.90 1.045 1.059 R 3.94 4.42 0.155 0.174 S 4.72 4.85 0.186 0.191 T 24.59 25.07 0.968 0.987 U -0.05 0.1 -0.002 0.004 V 3.30 4.57 0.130 0.180 W 0.780 0.830 19.81 21.08 Dimensions SOT-227(ISOTOP) Unit VDSS TJ=25oC to 150oC VDGR TJ=25oC to 150oC; RGS=1M VGS Continuous VGSM Transient ID25 TC=25oC 44N50 48N50 IDM TC=25oC;pulse width limited by max. TJM 44N50 48N50 IAR TC=25oC A EAR Repetitive mJ dv/dt IS IDM; -di/dt 100A/us; VDD VDSS' V/ns TJ 150oC; RG=2 PD TC=25oC W VRRM V IFAVM TC=70oC; rectangular; d=0.5 A IFRM tp <10us; pulse width limited by TJ A PD TC=25oC W TJ TJM oC Tstg VISOL 50/60 Hz, RMS t=1 min IISOL 1 mA t=1 s Md Mounting torque Terminal connection torque(M4) Weight g 1.5/13 3000 520 V ±20 ±30 A A 176 192 Maximum RatingsTest Conditions 500 500 Symbol 1.5/13 Nm/Ib.in. 2500 -40…+ 150 150 -40…+ 150 CASE V DIODE HiPerFET MOSFET 600 800 180
SMOS44/48N50D2, SMOS44/48N50D3 Power MOSFETs Symbol Test Conditions Unit min. typ. max. VDSS VGS=0V; ID=1 mA 500 V VGS(th) VDS=VGS; ID=8 mA 2 4 V IGSS VGS=±20VDC; VDS=0 ±200 nA RDS(on) VGS=10V; ID=0.5ID25 44N50 0.12 48N50 0.10 Symbol Test Conditions Unit min. typ. max. gts VDS=10V; ID=0.5ID25; pulse test 22 42 S Cies 8400 Coes VGS=0V; VDS=25V; f=1MHz 900 pF Cres 280 Qg(on) 270 Qgs VGS=10V; VDS=0.5VDSS'; ID=0.5ID25 60 nC Qgd 135 td(on) 30 ns tr VGS=10V; VDS=0.5VDSS; ID=0.5ID25 60 ns td(off) RG=1 (External) 100 ns tf 30 ns RthJC 0.24 K/W RthCK 0.05 K/W (TJ=25oC, unless otherwise specified) (TJ=25oC, unless otherwise specified) Characteristic Values Characteristic Values IDSS VDS=0.8VDSS; TJ=25oC 400 uA VGS=0V; TJ=125oC 2 mA Pulse test, t 300us, duty cycle d 2% Ultra-fast Diode Symbol Test Conditions Unit min. typ. max. IR TJ=25oC; VR=VRRM 200 uA VR=0.8VRRM 100 uA TJ=125oC; VR=0.8VRRM 14 mA VF IF=7A; VGS=0V; TJ=150oC 1.5 Pulse test, t 300us, duty cycle d 2%; TJ=25oC 1.8 trr II=1A; di/dt= - 200A/us; VR=30V; TJ=25oC 35 50 ns IRM IF=60A; di/dt= - 480A/us; VR=350V; TJ=100oC 19 21 A RthJC 0.7 K/W RthJK 0.05 K/W V Characteristic Values (TJ=25oC, unless otherwise specified)