DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
  • AEC−Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage MMBT2222L MMBT2222AL, SMMBT2222AL VCEO Vdc Collector−Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL VCBO Vdc Emitter−Base Voltage MMBT2222L MMBT2222AL, SMMBT2222AL VEBO 5.0 6.0 Vdc Collector Current − Continuous IC 600 mAdc Collector Current − Peak (Note 3) ICM 1100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction−to−Ambient R/C0113JA 556 °C/W Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance, Junction−to−Ambient R/C0113JA 417 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 3. Reference SOA curve. SOT−23 CASE 318 STYLE 6 MARKING DIAGRAM xxx = 1P or M1B M = Date Code* /C0071= Pb−Free Package COLLECTOR BASE EMITTER http://onsemi.com (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

/C0071

MMBT2222L, MMBT2222AL, SMMBT2222AL http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 Vdc Collector−Base Breakdown Voltage (IC = 10 /C0109Adc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 Vdc Emitter−Base Breakdown Voltage (IE = 10 /C0109Adc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A ICEX − 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) MMBT2222 (VCB = 60 Vdc, IE = 0) MMBT2222A, SMMBT2222A (VCB = 50 Vdc, IE = 0, TA = 125°C) MMBT2222 (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222A, SMMBT2222A ICBO − 0.01 0.01 /C0109Adc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A, SMMBT2222A IEBO − 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A, SMMBT2222A IBL − 20 nAdc ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = −55°C) MMBT2222A only (IC = 150 mAdc, VCE = 10 Vdc) (Note 4) (IC = 150 mAdc, VCE = 1.0 Vdc) (Note 4) (IC = 500 mAdc, VCE = 10 Vdc) (Note 4) MMBT2222 MMBT2222A, SMMBT2222A hFE 100 300 Collector−Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) MMBT2222 MMBT2222A, SMMBT2222A (IC = 500 mAdc, IB = 50 mAdc) MMBT2222 MMBT2222A, SMMBT2222A VCE(sat) 0.4 0.3 1.6 1.0 Vdc Base−Emitter Saturation Voltage (Note 4) (IC = 150 mAdc, IB = 15 mAdc) MMBT2222 MMBT2222A, SMMBT2222A (IC = 500 mAdc, IB = 50 mAdc) MMBT2222 MMBT2222A, SMMBT2222A VBE(sat) 0.6 1.3 1.2 2.6 2.0 Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product (Note 5) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) MMBT2222 MMBT2222A, SMMBT2222A fT 250 300 MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT2222 MMBT2222A, SMMBT2222A Cibo pF Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A hie 2.0 0.25 8.0 1.25 k/C0087 Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A hre 8.0 4.0 X 10−4 Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A, SMMBT2222A hfe 300 375

Figure 9. Capacitances Figure 10. Current−Gain Bandwidth Product Figure 11. Collector Emitter Saturation Voltage Figure 12. Base Emitter Saturation Voltage vs. Figure 13. Base Emitter Voltage vs. Collector

1.2 IC/IB = 10

Figure 14. Temperature Coefficients

MMBT2222L, MMBT2222AL, SMMBT2222AL http://onsemi.com Figure 15. Safe Operating Area Device Specific Marking Code Package Shipping† MMBT2222LT1G M1B SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT2222ALT1G, SMMBT2222ALT1G 1P SOT−23 (Pb−Free) 3000 / Tape & Reel MMBT2222LT3G M1B SOT−23 (Pb−Free) 10,000 / Tape & Reel MMBT2222ALT3G, SMMBT2222ALT3G 1P SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MMBT2222L, MMBT2222AL, SMMBT2222AL http://onsemi.com PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP /C0466mm inches/C0467SCALE 10:1 0.8 0.031 0.9 0.035 0.95 0.0370.95 0.037 2.0 0.079 SOLDERING FOOTPRINT* *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. VIEW C L 0.25 /C0113 e E E b A SEE VIEW C DIM A MIN NOM MAX MIN MILLIMETERS 0.89 1.00 1.11 0.035 INCHES A1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 D 2.80 2.90 3.04 0.110 E 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 L 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 NOM MAX H c ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. MMBT2222LT1/D PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative