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Technical content
FEATURES
- For surface mounted applications in order to optimize board space
- Low profile package
- Built-in strain relief
- Glass passivated junction
- Low inductance
- Excellent clamping capability
- Repetition rate (duty cycle):0.01%
- Fast response time: typically less than 1.0 ps from 0 volts to BV for unidirectional types
- Typical IR less than 1µA above 10V
- High temperature soldering: 250°C/10 seconds at terminals
- Plastic package has Underwriters Laboratory Flammability Classification 94 V-O MECHANICAL DATA Case: JEDEC DO214AB. Molded plastic over glass passivated junction Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denoted positive end (cathode) except Bidirectional Standard Packaging: 12mm tape (EIA STD RS-481) Weight: 0.007 ounces, 0.21 grams) Ratings at 25°C ambient temperature unless otherwise specified. RATING SYMBOL VALUE UNITS Peak Pulse Power Dissipation on 10/1000 µs waveform (NOTE 1, 2, Fig.1) IPPM SEE TABLE 1 Amps Superimposed on Rated Load, (JEDEC Method)(Note2, 3) Operatings and Storage Temperature Range TJ, TSTG -55 +150 °C NOTES: 1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2. 3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum. Certified RoHS Compliant UL File # E223026 DEVICES FOR BIPOLAR APPLICATIONS MAXIMUM RATINGS AND CHARACTERISTICS For Bidirectional use C or CA Suffix for types SMLJ5.0 thru types SMLJ170 (e.g. SMLJ5.0C, SMLJ170CA) Electrical characteristics apply in both directions. PPPM Minimum 3000 Watts Peak Pulse Current of on 10/1000 µs waveform (Note 1,Fig 3) IFSM 300 AmpsPeak Forward Surge Current, 8.3ms Single Half Sine-wave SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE-5.0 TO 170 Volts
3000 Watt Peak Pulse Power
MDE Semiconductor, Inc. 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com SMLJ SERIES 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 DO-214AB (SMC J-Bend) 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.280 (7.11) 0.260 (6.60) Cathode Band 0.103 (2.62) 0.079 (2.06) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) Dimensions in inches and(millimeters) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) MAX.
RATING AND CHARACTERISTIC CURVES SMLJ SERIES MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com 101111 t F N o n N F F T 100011 t F t - Time(ms) 3.0 4.0 150 1.0 2.0 tr = 10μsec. Peak Value IPPM TJ = 25°C Pulse Width(td)is defined as the point where the peak current decays to 50% of I PPM 10/1000μsec.Waveform as defined by R.E.A. td Fig.3 - Pulse Waveform 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current,% IRSM 3.0 0 0.1 100 1000 td - Pulse Width (sec.) Fig. 1 - Peak Pulse Power Rating Curve PPPM-Peak Pulse Power (kW) Non-repetitive pulse waveform shown in Fig.3 T A = 25°C 100 10000 1000000 1 10 100 1000 CJ - Capacitance (pF) Fig. 4 - Typical Junction Capacitance VWM - Reverse Stand-Off Uni-directional V=OV PM(AV),Steady State Power Dissipation (W) 1.0 2.0 3.0 4.0 Fig. 5 - Steady State Power Derating Curve TL - Lead Temperature (°C) 5.0 6.0 7.0 8.0 60Hz Resistive or Inductive Load 100 150 200 250 300 350 1 10 100 Number of Cycles at 60 Hz Fig.6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Only 8.3ms Single Half Sine-Wave (JEDEC Method)TJ=TJ max. IFSM-Peak Forward Surge 12.5 37.5 62.5 87.5 100 0 25 50 75 100 125 150 175 200 Fig.2 - Pulse Derating Peak Pulse Power (PPP) or Current (IPP) Derating in TA - Ambient Temperature Bi-directional V=OV Uni-directional @VR Bi-directional @VR
3000 Watt Surface Mount TVS
For bidirectional type having Vrwm of 10 volts and less, the IR limit is double For parts without A, the VBR is ± 10% Certified RoHS Compliant UL File # E223026 MAXIMUM CLAMPING VOLTAGE @IPP VC (V) UNI-POLAR BI-POLAR DEVICE MARKING CODE REVERSE STANDOFF VOLTAGE VRWM (V) 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 MDE Semiconductor, Inc. 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com PEAK PULSE CURRENT IPP (A) REVERSE LEAKAGE @ VRWM IR (µA) BREAKDOWN VOLTAGE VBR (V) MIN. @ IT BREAKDOWN VOLTAGE VBR (V) MAX. @ IT TEST CURRENT (IT) mA