SMK830F-1 KODENSHI | Alldatasheet
Document overview
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- PDF pages: 8
Technical content
Features
- High Voltage : BV DSS=500V(Min.)
- Low Crss : Crss=33pF(Typ.)
- Low gate charge : Qg=16nC(Typ.)
- Low RDS(on) : RDS(on)=1.5Ω(Max.)
Ordering Information
Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 500 V Gate-source voltage V GSS ±30 V TC=25℃ 4.5 A Drain current (DC) * I D TC=100℃ 2.8 A Drain current (Pulsed) * I DM 18 A Power dissipation P D 30 W Avalanche current (Single) ② IAS 4.5 A Single pulsed avalanche energy ② EAS 472 mJ Avalanche current (Repetitive) ① IAR 4.5 A Repetitive avalanche energy ① EAR 5.0 mJ Junction temperature T J 150 °C Storage temperature range T stg -55~150 °C * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Junction-case R th(J-C) - 4.16 Thermal resistance Junction-ambient R th(J-A) - 62.5 /W℃ Type No. Marking Package Code SMK830F SMK830 TO-220F-3L Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code AUK ΔYMDD SDB20D45 AUK ΔYMDD SDB20D45 AUK GYMDD SMK830
Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage V (BR)DSS I D=250uA, VGS=0V 500 - - V Gate threshold voltage V GS(th) I D=250uA, VDS= VGS 2.0 - 4.0 V Drain-source cut-off current I DSS V DS=500V, VGS=0V - - 1 uA Gate leakage current I GSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(on) V GS=10V, ID=2.25A - 1.2 1.5 Ω Forward transfer conductance ④ gfs V DS=10V, ID=2.25A - 5.2 - S Input capacitance Ciss - 745 930 Output capacitance C oss - 82 102 Reverse transfer capacitance C rss VGS=0V, VDS=25V f=1 MHz - 33 42 pF Turn-on delay time t d(on) - 12 - Rise time t r - 46 - Turn-off delay time t d(off) - 50 - Fall time t f VDD=250V, ID=4.5A RG=25Ω - 48 - ns Total gate charge Q g - 16 20 Gate-source charge Q gs - 5.5 - Gate-drain charge Q gd VDS=400V, VGS=10V ID=4.5A ③④ - 4.0 - nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) I S - - 4.5 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 18 A F orward voltage ④ VSD V GS=0V, IS=4.5A - - 1.4 V Reverse recovery time t rr - 263 - ns Reverse recovery charge Q rr IS=4.5A, VGS=0V dIF/dt=100A/㎲ - 1.9 - μC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=42mH, IAS=4.5A, VDD=50V , RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature
Fig. 1 I D - VDS Fig. 3 R DS(on) - ID Electrical Characteristic Curves Fig. 4 I S - VSD Fig. 2 I D - VGS Fig. 6 V GS - QG Fig. 5 Capacitance - V DS
C C Fig. 8 RDS(on) - TJ Fig. 7 V (BR)DSS - TJ Fig. 10 Safe Operating Area Fig. 9 I D - TC
Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Switching Time Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform
Fig. 14 Peak Diode Recovery dv/dt Test Circuit & Waveform
Outline Dimension u n i t : m m
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equi pments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.