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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
High Voltage : BV DSS=500V(Min.) Low Crss : Crss=27pF(Typ.) Low gate charge : Qg=65nC(Typ.) Low RDS(on) : RDS(on)=0.26Ω(Max.)
Ordering Information
Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 500 V Gate-source voltage V GSS 30 V Drain current (DC) * I D (Tc=25℃) 20 A (Tc=100℃) 12.6 A Drain current (Pulsed) * I DM 80 A Drain power dissipation P D 150 W Avalanche current (Single) ② IAS 20 A Single pulsed avalanche energy ② EAS 1000 mJ Avalanche current (Repetitive) ① IAR 20 A Repetitive avalanche energy ① EAR 28 mJ Junction temperature T J 150 Storage temperature range T stg -55~150 * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Thermal resistance Junction-case R th(J-C) - 0.83 C/W Junction-ambient R th(J-A) - 40 Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code Type No. Marking Package Code SMK2050CI SMK2050 TO-3P AUK GYMDD SMK2050
Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS ID=250A, VGS=0 500 - - V Gate threshold voltage V GS(th) ID=250A, VDS=VGS 2 - 4 V Drain-source cut-off current I DSS VDS=500V, VGS=0V - - 1 uA VDS=400V, VGS=0V TC=125℃ - - 100 Gate leakage current I GSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance ④ RDS(ON) V GS=10V, ID=10A - 0.21 0.26 Forward transfer conductance ④ gfs V DS=10V, ID=10A - 24.6 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 3120 - pF Output capacitance Coss - 355 - Reverse transfer capacitance Crss - 27 - Turn-on delay time t d(on) VDD=250V, ID=20A RG=25Ω - 95 - ns Rise time t r - 375 - Turn-off delay time t d(off) - 100 - Fall time t f - 105 - Total gate charge Q g VDS=400V, VGS=10V ID=20A - 65 85 nC Gate-source charge Q gs - 17.6 - Gate-drain charge Q gd - 18.4 - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Source current (DC) I S Integral reverse diode in the MOSFET - - 20 A Source current (Pulsed) ① ISP - - 80 F orward voltage ④ VSD V GS=0V, IS=20A - - 1.4 V Reverse recovery time t rr IS=20A, VGS=0V dIS/dt=100A/us - 507 - ns Reverse recovery charge Q rr - 7.2 - uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=4.5mH, IAS=20A, VDD=50V , RG=25Ω, Starting TJ=25℃ ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature
Electrical Characteristic Curves Fig. 1 I D - VDS Fig. 4 I S - VSD Fig. 3 R DS(on) - ID Fig.6 V GS - QG Fig. 2 I D - VGS Fig. 5 Capacitance - V DS
Electrical Characteristic Curves C C Fig.8 RDS(on) - TJ Fig. 9 I D - TC Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area
Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
O u t l i n e D i m e n s i o n unit: mm
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipm ents without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.