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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
High Voltage : BV DSS=200V(Min.) Low Crss : Crss=55pF(Typ.) Low gate charge : Qg=22nC(Typ.) Low RDS(on) : RDS(on)=0.17Ω(Max.)
Ordering Information
Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 200 V Gate-source voltage V GSS 30 V Drain current (DC) * I D TC=25C 18 A TC=100C 11.4 A Drain current (Pulsed) * I DM 72 A Power dissipation P D 100 W Avalanche current (Single) ② IAS 18 A Single pulsed avalanche energy ② EAS 453 mJ Avalanche current (Repetitive) ① IAR 18 A Repetitive avalanche energy ① EAR 13.9 mJ Junction temperature T J 150 Storage temperature range T stg -55~150 * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Thermal resistance Junction-case R th(J-C) - 1.25 C/W Junction-ambient R th(J-A) - 62.5 Type No. Marking Package Code SMK1820D2 SMK1820 D2-PAK Column 1 : Manufacturer Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date) Column 3 : Device Code AUK GYMDD SMK1820
Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS I D=250uA, VGS=0V 200 - - V Gate threshold voltage V GS(th) I D=250uA, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current I DSS VDS=200V, VGS=0V - - 1 uA VDS=160V, TC=125C - - 10 Gate leakage current I GSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance ④ RDS(on) V GS=10V, ID=9.0A - 0.14 0.17 Forward transfer conductance ④ gfs V DS=10V, ID=9.0A - 10.5 - S Input capacitance Ciss VGS=0V, VDS=25V f=1 MHz - 942 1240 pF Output capacitance C oss - 227 310 Reverse transfer capacitance C rss - 55 71 Turn-on delay time t d(on) VDD=100V, ID=18A RG=25Ω - 15 - ns Rise time t r - 130 - Turn-off delay time t d(off) - 135 - Fall time t f - 105 - Total gate charge Q g VDS=160V, VGS=10V ID=18A - 22 28 nC Gate-source charge Q gs - 6.6 - Gate-drain charge Q gd - 7.2 - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Source current (DC) I S Integral reverse diode in the MOSFET - - 18 A Source current (Pulsed) ① ISM - - 72 F orward voltage ④ VSD V GS=0V, IS=18A - - 1.4 V Reverse recovery time t rr IS=18A, VGS=0V dIF/dt=100A/us - 208 - ns Reverse recovery charge Q rr - 1.63 - uC Note ; ① Repetitive rating : Pulse width limited by maximum junction temperature ② L=2.1mH, IAS=18A, VDD=50V , RG=25Ω, Starting TJ=25C ③ Pulse Test : Pulse width≤300us, Duty cycle≤2% ④ Essentially independent of operating temperature
Fig. 5 Capacitance - V DS Fig. 1 I D - VDS Fig. 4 I S - VSD Fig. 3 R DS(on) - ID Fig. 6 V GS - QG Electrical Characteristic Curves Fig. 2 I D - VGS
C ㅋ C Fig. 8 RDS(on) - TJ F i g . 9 ID - TC Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area
Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
※ Recommended Land Pattern [unit: mm] O u t l i n e D i m e n s i o n unit: mm
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipm ents without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.