SMK0860P-1

SMK0860P-1 KODENSHI | Alldatasheet

Document overview

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• PDF pages: 8

Technical content

Features

• High Voltage: BV DSS=600V(Min.)
• Low Crss : Crss=9.7pF(Typ.)
• Low gate charge : Qg=22nC(Typ.)
• Low RDS(on) :RDS(on)=1.2Ω(Max.)

Ordering Information

Absolute maximum ratings (TC=25°C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 600 V Gate-source voltage V GSS ±30 V (Tc=25℃) 7.5 A Drain current (DC) * I D (Tc=100℃) 4.7 A Drain current (Pulsed) * I DM 30 A Drain power dissipation P D 90 W Avalanche current (Single) ② IAS 7.5 A Single pulsed avalanche energy ② EAS 325 mJ Avalanche current (Repetitive) ① IAR 7.5 A Repetitive avalanche energy ① EAR 21.7 mJ Junction temperature T J 150 Storage temperature range T stg -55~150 * Limited by maximum junction temperature Characteristic Symbol Typ. Max Unit Junction-case R th(J-C) - 1.38 Thermal resistance Junction-ambient R th(J-a) - 62.5 ℃/W Type No. Marking Package Code SMK0860P SMK0860 TO-220AB-3L

Electrical Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS ID=250μA, VGS=0 600 - - V Gate threshold voltage V GS(th) ID=250μA, VDS= VGS 2.0 - 4.0 V Drain-source cut-off current I DSS V DS=600V, VGS=0V - - 1 μA Gate leakage current I GSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) V GS=10V, ID=3.75A - 1.0 1.2 Ω Forward transfer conductance ④ gfs V DS=10V, ID=3.75A - 7.3 - S Input capacitance Ciss - 968 1210 Output capacitance Coss - 105 131 Reverse transfer capacitance Crss VGS=0V, VDS=25V f=1MHz - 9.7 12.1 pF Turn-on delay time t d(on) - 18 - Rise time t r - 19 - Turn-off delay time t d(off) - 72 - Fall time t f VDD=300V, ID=7.5A RG=25Ω - 28 - ns Total gate charge Q g - 22 27 Gate-source charge Q gs - 5.2 - Gate-drain charge Q gd VDS=480V, VGS=10V ID=7.5A ③④ - 6.3 - nC Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit Source current (DC) I S - - 7.5 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 30 A F orward voltage ④ VSD V GS=0V, IS=7.5A - - 1.4 V Reverse recovery time t rr - 365 - ns Reverse recovery charge Q rr Is=7.5A, VGS=0, diS/dt=100A/us - 3.4 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=10.6mH, IAS=7.5A, VDD=50V , RG=27Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle ≤ 2% ④ Essentially independent of operating temperature

Fig. 4 I S - VSD ℃ VGS Top 7.0V 6.5V 6.0V 5.5V 5.0V 4.5V Buttom: 4.0V Fig. 1 I D - VDS Fig. 3 R DS(on) - ID Fig.6 V GS - QG Electrical Characteristic Curves Fig. 2 I D - VGS Fig. 5 Capacitance - V DS

Fig.8 RDS(on) - TJ Fig. 9 I D - TC Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area Electrical Characteristic Curves

Fig. 10 Gate Charge Test Circuit & Waveform Fig. 11 Resistive Switching Test Circuit & Waveform F i g . 1 2 EAS Test Circuit & Waveform

Fig. 13 Diode Reverse Recovery Time Test Circuit & Waveform

The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equi pments without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.