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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Features
Low drain-source On resistance: RDS(on)=2.4Ω (Typ.) Low gate charge: Qg=11.2nC (Typ.) Low reverse transfer capacitance: Crss=5.6pF (Typ.) RoHS compliant device 100% avalanche tested
Ordering Information
Part Number Marking Package SMK0465FG SMK0465G TO-220FT-3L (Short Dambar) Marking Information Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 650 V Gate-source voltage V GSS 30 V Drain current (DC) * I D Tc=25C 4 A Tc=100C 2.53 A Drain current (Pulsed) * I DM 16 A Single avalanche energy (Note 2) E AS 81.5 mJ Repetitive avalanche current (Note 1) IAR 4 A Repetitive avalanche energy (Note 1) E AR 3.4 mJ Power dissipation P D 30 W Junction temperature T J 150 C Storage temperature range T stg -55~150 C * Limited only maximum junction temperature AUK ΔYMDD SDB20D45 AUK ΔYMDD SDB20D45 AUK ◎△YMDD SMK0465G Column 1: Manufacturer Column 2: Production Information e.g.) ◎△YMDD -. ◎: Option Code -. △: Factory Management Code -. YMDD: Date Code (Year, Month, Daily) Column 3: Device Code TO-220FT-3L G D S
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 2 of 8 Thermal Characteristics Characteristic Symbol Rating Unit Thermal resistance, junction to case R th(j-c) Max. 4.16 C/W Thermal resistance, junction to ambient R th(j-a) Max. 62.5 Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS I D=250uA, VGS=0 650 - - V Gate threshold voltage V GS(th) V DS=10V , ID=250uA 2 - 4 V Drain-source cut-off current I DSS VDS=650V , VGS=0V - - 1 uA VDS=600V , Tc=150C - - 100 uA Gate leakage current I GSS VDS=0V , VGS=30V - - 100 nA Drain-source on-resistance R DS(ON) V GS=10V , ID=2A - 2.4 3 Forward transfer conductance (Note 3) g fs V DS=10V , ID=2A - 4 - S Input capacitance Ciss VDS=25V , VGS=0V, f=1MHz - 703 878 pF Output capacitance C oss - 54.6 68.2 Reverse transfer capacitance C rss - 5.6 7.0 Turn-on delay time (Note 3,4) t d(on) VDS=300V , ID=4A, RG=25Ω - 10 - ns Rise time (Note 3,4) t r - 42 - Turn-off delay time (Note 3,4) t d(off) - 38 - Fall time (Note 3,4) t f - 46 - Total gate charge (Note 3,4) Q g VDS=520V , VGS=10V , ID=4A 9.0 11.2 14 nC Gate-source charge (Note 3,4) Q gs 2.9 3.9 4.9 Gate-drain charge (Note 3,4) Q gd 1.9 2.5 3.1 Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min. Typ. Max. Unit Source current (DC) I S Integral reverse diode in the MOSFET - - 4 A Source current (Pulsed) I SM - - 16 A Forward voltage V SD V GS=0V , ISD=4A - - 1.4 V Reverse recovery time (Note 3,4) t rr ISD=4A, VGS=0V dIF/dt=100A/us - 300 - ns Reverse recovery charge (Note 3,4) Q rr - 2.2 - uC Note: 1. Repeated rating: Pulse width limited by safe operating area 2. L=9.4mH, I AS=4A, VDD=50V , RG=25, Starting TJ=25C 3. Pulse test: Pulse width ≤300us, Duty cycle≤2% 4. Essentially independent of operat ing temperature typical characteristics SMK0465FG
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 3 of 8 Typical Electrical Characteristics Curves Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics Fig.3 On-Resistance Variation with Drain Current and Gate Voltage Fig. 4 Body Diode Forward Voltage Variation with S o u r c e C u r r e n t Fig. 5 Typical Capacitance Characteristics Fig. 6 Typical Total Gate Charge Characteristics SMK0465FG
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 4 of 8 SMK0465FG Fig. 7 Breakdown Voltage Variation vs. Temperature Fig. 8 On-Resistance Variation vs. Temperature Fig. 9 Maximum Drain Current vs. Case Temperature Fig. 10 Maximum Safe Operating Area Fig. 11 Threshold Voltage Variation vs. Temperature Fig. 12 Avalanche Energy vs. Temperature
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 5 of 8 Fig. 15 Resistive Switching Test Circuit & Waveform Fig. 14 Gate Charge Test Circuit & Waveform SMK0465FG Fig. 13 Transient Thermal Impedance
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 6 of 8 Fig. 17 Diode Reverse Recovery Time Test Circuit & Waveform SMK0465FG Fig. 16 E AS Test Circuit & Waveform
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 7 of 8 Package Outline Dimensions SMK0465FG
Rev. date: 23-JUN-14 KSD-T0O152-000 www.auk.co.kr 8 of 8 The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communication eq uipment, measuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion contro l, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipm ents without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice. SMK0465FG