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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
High Voltage : BV DSS=650V(Min.) Low Crss : Crss=5.6pF(Typ.) Low gate charge : Qg=11.2nC(Typ.) Low RDS(on) : RDS(on)=3.0Ω(Max.)
Ordering Information
Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 650 V Gate-source voltage V GSS 30 V Drain current (DC) I D (Tc=25℃) 4.0 A (Tc=100℃) 2.53 A Drain current (Pulsed) * I DM 16 A Drain Power dissipation P D 48 W A valanche current (Single) ② IAS 4 A Single pulsed avalanche energy ② EAS 81.5 mJ Avalanche current (Repetitive) ① IAR 4 A Repetitive avalanche energy ① EAR 3.4 mJ Junction temperature T J 150 Storage temperature range T stg -55~150 * Limited by maximum junction temperature Characteristic Symbol Typ. Max Unit Thermal resistance Junction-case R th(J-C) - 2.6 /W℃ Junction-ambient R th(J-a) - 62.5 Type No. Marking Package Code SMK0465D SMK0465 TO-252 Column 1 2 : Device Code Column 3: Production Information e.g.) YWW -. Y: Year Code -. WW: Week Code
Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS ID=250A, VGS=0 650 - - V Gate-threshold voltage V GS(th) ID=250A, VDS= VGS 2.0 - 4.0 V Drain-source leakage current I DSS V DS=650V, VGS=0V - - 1 A Gate-source leakage I GSS VDS=0V, VGS=30V - - 100 nA Drain-Source on-resistance ④ RDS(ON) V GS=10V, ID=2.0A - 2.4 3.0 Forward transfer admittance ④ gfs V DS=10V, ID=2.0A - 4.0 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 703 878 pF Output capacitance Coss - 54.6 68.2 Reverse transfer capacitance Crss - 5.6 7.0 Turn-on delay time t d(on) VDD=300V, ID=4A RG=25Ω - 10 - ns Rise time t r - 42 - Turn-off delay time t d(off) - 38 - Fall time t f - 46 - Total gate charge Q g VDS=520V, VGS=10V ID=4A - 11.2 14.0 Gate-source charge Q gs - 3.9 - nC Gate-drain charge Q gd - 2.5 - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current I S Integral reverse diode in the MOSFET - - 4 A Source current (Pulsed) ① ISM - - 16 F orward voltage ④ VSD V GS=0V, IS=4A - - 1.4 V Reverse recovery time t rr Is=4A dis/dt=100A/us - 300 - ns Reverse recovery charge Q rr - 2.2 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=9.4mH, IAS=4A, VDD=50V , RG=27Ω , Starting TJ = 25℃ ③ Pulse Test : Pulse Width＜ 300us, Duty cycle ≤ 2% ④ Essentially independent of operating temperature
Electrical Characteristic Curves Fig. 5 Capacitance - V DS Fig. 4 I S - VSD Fig. 3 R DS(on) - ID Fig. 6 V GS - QG Fig. 2 I D - VGS Fig. 1 I D - VDS
ㅋ C C Fig. 8 RDS(on) - TJ F i g . 9 ID - TC Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area Electrical Characteristic Curves
Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
※ Recommended Land Pattern [unit: mm] O u t l i n e D i m e n s i o n unit: mm 4.60 1.50 2.50 7.00 7.00
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipm ents without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.