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Technical content

Features

 High Voltage : BV DSS=700V(Min.)  Low Crss : Crss=2.6pF(Typ.)  Low gate charge : Qg=4.1nC(Typ.)  Low RDS(ON) : RDS(ON)=15Ω(Max.)

Ordering Information

Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Rating Unit Drain-source voltage V DSS 700 V Gate-source voltage V GSS 30 V Drain current (DC) * I D (TC=25℃) 1.0 A (TC=100℃) 0.63 Drain current (Pulsed) * I DP 4.0 A Total Power dissipation P D 28 W A valanche current (Single) ② IAS 1.0 A Single pulsed avalanche energy ② EAS 17 mJ Avalanche current (Repetitive) ① IAR 1.0 A Repetitive avalanche energy ① EAR 0.5 mJ Junction temperature T J 150 Storage temperature range T stg -55~150 * Limited by maximum junction temperature Characteristic Symbol Typ. Max. Unit Thermal resistance* Junction-case R th(J-C) - 4.46 /W℃ Junction-ambient R th(J-A) - 62.5 Type No. Marking Package Code SMK0170I SMK0170 I-PAK Column 1 : Device Code Column 2 : Production Information e.g.) YWW -. Y : Year Code -. WW : Week Code SMK0170 YWW SMK0170 YWW

Electrical Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Drain-source breakdown voltage BV DSS ID=250A, VGS=0 700 - - V Gate threshold voltage V GS(th) ID=250A, VDS=VGS 2.0 - 4.0 V Drain-source cut-off current I DSS V DS=700V, VGS=0V - - 1 A Gate leakage current I GSS VDS=0V, VGS=30V - - 100 nA Drain-source on-resistance R DS(ON) V GS=10V, ID=0.5A - 12.5 15.0  Forward transfer conductance ④ gfs V DS=10V, ID=0.5A - 0.5 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 124 155 pF Output capacitance Coss - 17.7 22.1 Reverse transfer capacitance Crss - 2.6 3.3 Turn-on delay time t d(on) VDD=300V, ID=1.0A RG=25Ω - 7 - ns Rise time t r - 21 - Turn-off delay time t d(off) - 13 - Fall time t f - 27 - Total gate charge Q g VDD=560V, VGS=10V ID=1.0A - 4.1 5.1 nC Gate-source charge Q gs - 1.8 - Gate-drain charge Q gd - 0.9 - Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted) Characteristic Symbol Test Co ndition Min. Typ. Max. Unit Source current I S Integral reverse diode in the MOSFET - - 1.0 A Source current (Pulsed) ① ISM - - 4.0 F orward voltage ④ VSD V GS=0V, IS=1.0A - - 1.4 V Reverse recovery time t rr IS=1.0A, VGS=0V dIS/dt=100A/us - 190 - ns Reverse recovery charge Q rr - 0.53 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=50mH, IAS=0.8A, VDD=50V , RG=25Ω ③ Pulse Test : Pulse Width＜300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature SMK0170I

T Fig. 5 Capacitance - V DS Fig. 1 I D - VDS Fig. 4 I S - VSD Fig. 3 R DS(on) - ID Fig. 6 V GS - QG Electrical Characteristic Curves Fig. 2 I D - VGS

Fig. 8 RDS(on) - TJ Fig. 9 I D - Ta Fig. 7 V DSS - TJ Fig. 10 Safe Operating Area

Fig. 11 Gate Charge Test Circuit & Waveform Fig. 12 Resistive Switching Test Circuit & Waveform F i g . 1 3 EAS Test Circuit & Waveform

Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform

Outline Dimension u n i t : m m

The AUK Corp. products are intended for the use as components in general electronic equipment (Office and co mmunication equipment, m easuring equipment, home appliance, etc.). Please make sure that you consult with us before you use these AUK Corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to th e welfare of human life(atomi c energy control, airplane, spaceship, transportation, co mbustion control, all types of safety device, etc.). AUK Corp. cannot accept liability to any damage which may occur in case these AUK Corp. products were used in the mentioned equipm ents without prior consultation with AUK Corp.. Specifications mentioned in this publication are subject to change without notice.