SMI120N32E2 SILIKRON | Alldatasheet

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©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page1of9 MainProductCharacteristics: FeaturesandBenefits: AbsoluteMaxRating: Symbol Parameter Value Units VDS DrainSourceVoltage 1200 V VGS,max GateSourceVoltage,AbsoluteMaximumValues -8/+22 V VGS,op GateSourceVoltage,RecommendedOperationalValues -4/+15 V ID ContinuousDrainCurrent@TC =25°C 87 AContinuousDrainCurrent@TC =100°C 62 ID(puls) PulsedDrainCurrent，PulseWidthtPlimitedbyTj,max 188 PD PowerDissipation@TC =25˚C,TJ =175˚C 375 W TJ TSTG OperatingJunctionandStorageTemperatureRange -55to+175 °C TL SolderingTemperature 260 °C VDS 1200V ID 87A RDS(on) 32mΩ TO-247-4L SchematicDiagram  Highblocking voltagewith lowon-resistance  Highspeedswitching,verylowswitchinglosses  Highblocking voltagewith lowon-resistance  Fastintrinsic diode with lowreverserecovery (Qrr)  Temperatureindependentturn-offswitching losses Applications:  On-boardcharger/PFC  EVbatterychargers  Booster/DC-DCconverter  Switchmode powersupplies 321

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page2of9 ThermalResistance Symbol Characterizes Typ. Max. Units RθJC ThermalResistance,Junction-to-case — 0.4 °C/W RθJA ThermalResistance,Junction-to-ambient — 37 °C/W ElectricalCharacteristics@TA=25°C unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-SourceBreakdownVoltage 1200 — — V VGS =0V,ID =100μA RDS(on) StaticDrain-to-SourceOn-resistance — 32 40 mΩ VGS=15V,ID =40A — 49 — VGS=15V,ID=40A,TJ =175°C — 27 34 VGS=18V,ID =40A — 47 — VGS=18V,ID=40A,TJ=175°C VGS(th) GateThresholdVoltage 2.3 — 3.6 V VDS =VGS,ID =11.5mA IDSS Drain-to-SourceLeakageCurrent — — 10 μA VDS =1200V,VGS =0V IGSS Gate-to-SourceForwardLeakage — — 100 nA VGS =15V — — -100 VGS =-15V gfs Transconductance — 24 — S VDS =20V,ID =40A Rg InternalGateResistance — 0.6 — Ω VAC =25mV,f=1MHz Qg TotalGateCharge — 96 — nC VDS =800V, VGS =-4/+15V, ID =40A Qgs Gate-to-SourceCharge — 25.5 — Qgd Gate-to-Drain("Miller")Charge — 30 — td(on) Turn-onDelayTime — 15 — ns VDS =800V,VGS=-4/+15V ID =40A,Rg=2.5Ω L=120uH tr RiseTime — 20 — td(off) Turn-OffDelayTime — 25 — tf FallTime — 10 — Eon TurnonSwitchingEnergy — 410 — μJ Eoff TurnoffSwitchingEnergy — 60 — Ciss InputCapacitance — 2700 — pF VGS =0V VDS =1000V ƒ=100KHz Coss OutputCapacitance — 140 — Crss ReverseTransferCapacitance — 10 — Eoss CossStoredEnergy — 90 — μJ ElectricalCharacteristicsoftheDiode@TA=25°C unlessotherwisespecified Symbol Parameter Min. Typ. Max. Units Conditions IS Continuousdiodeforwardcurrent — 87 — A VGS =-4V,Tc =25°C VSD DiodeForwardVoltage — 3.8 — V VGS =-4V,ISD =20A trr Reverserecoverytime — 55 — ns VR =800V,VGS =-4V ID =40A,di/dt= 2281A/μS,TJ =175°C Qrr ReverseRecoveryCharge — 750 — nC IRRM DiodePeakReverseRecovery Current — 26 — A

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page3of9 TypicalElectricalandThermalCharacteristics Figure1.TypicalOutputCharacteristics@TJ=-40℃ Figure2.TypicalOutputCharacteristics@TJ=25℃ Figure3.TypicalOutputCharacteristics@TJ=175℃ Figure4.Normalizedon-resistancevs. Temperature Figure5.On-resistancevs.DrainCurrent Figure6.On-resistancevs.Temperature

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page4of9 TypicalElectricalandThermalCharacteristics Figure7.TransferCharacteristicforVariousJunctionTemperatures Figure8.BodyDiodeCharacteristic@TJ =-40ºC Figure9.BodyDiodeCharacteristic@TJ =25ºC Figure10.BodyDiodeCharacteristic@TJ =175ºC Figure11.ThresholdVoltagevs.Temperature Figure12.GateChargeCharacteristic

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page5of9 TypicalElectricalandThermalCharacteristics Figure13.3rdQuadrantCharacteristic@TJ =-40ºC Temperatures Figure14.3rdQuadrantCharacteristic@TJ =25ºC Figure15.3rdQuadrantCharacteristic@TJ =175ºC Figure16.OutputCapacitorStoredEnergy Figure17.Capacitancesvs. Drain-sourceVoltage(0~200V) Figure18.Capacitancesvs.Drain-sourceVoltage(0~1200V)

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page6of9 TypicalElectricalandThermalCharacteristics Figure19.ContinuousDrainCurrentDeratingvs.CaseTemperature Figure20.MaximumPowerDissipationDeratingvs.Case Temperature Figure21.TransientThermalImpedance(Junction-Case) Figure22.OutputCapacitorStoredEnergy Figure23.ClampedInductiveSwitchingEnergyvs. DrainCurrent (VDD =600V) Figure24.ClampedInductiveSwitchingEnergyvs. DrainCurrent (VDD =800V))

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page7of9 TypicalElectricalandThermalCharacteristics Figure25.ClampedInductive SwitchingEnergyvs.RG(ext) Figure26.ClampedInductiveSwitchingEnergyvs.Temperature Figure27.SwitchingTimesvs.RG(ext)

©SilikronMicroelectronics(Suzhou)Co.,Ltd www.silikron.com Version:Preliminary page8of9 MechanicalData： Unit:mm

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