SMG702 SECOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Description
Thermal Resistance,Junction-to-Ambient Operating Junction and Storage Temperature Range Absolute Maximum Ratings at TA = 25 C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Parameter - Continuous - Non-repetitive (tp 50us)≦ o Symbol Ratings Unit mA V V mA ID W / C C mW VDS VGS IDM PD Tj, Tstg 6 0 ±20 800 500 225 556 -55~+150 ±40 VVGSM RthJA o o SMG702 500mA, 60V,RDS(ON) 4.5 N-Channel Enhancement Mode Power Mos.FET Ω Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain The SMG702 is universally used for all commercial Marking : 702- industrial surface mount application. 01-Jun-2002 Rev. A Page 1 of 3 Electrical Characteristics( Tj Unless otherwise specified) = 25 C o RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Gat Thershold Voltage Gate-Source Leakage Current Zero Gate Voltage Drain Current StaticDrain-Source On-Resistance On-State Drain Current Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS VGS(th) IGSS IDSS Crss Ciss Coss 1 2.5 100 4.5 V V nA uA mA pF Ω VGS=0V VDS=25V f=1.0MHz ID =50mA, V VGS=0V, ID=250uA VGS= 20V,± VDS=60V,VGS=0 VDS=7.5V,VGS=10V VDS=2.5V,ID =0.25mA Forward Transconductance Gfs mS __ VDS=0 ID(ON) _500 GS=5V ID =500mA, VGS=10V VDS>2 VDS(ON), D=200mAI (Pulse width 300us, dutycycle 2%)≦≦ D G S RoHS Compliant Product
500mA, 60V,RDS(ON) 4.5 N-Channel Enhancement Mode Power Mos.FET Ω Elektronische Bauelemente http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 3 Characteristics Curve
01-Jun-2002 Rev. A Page 3 of 3 Elektronische Bauelemente SMG702 500mA, 60V,RDS(ON) 4.5 N-Channel Enhancement Mode Power Mos.FET Ω http://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual