SMG6402 SECOS | Alldatasheet
Document overview
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Technical content
Features
- Ultra low RDS(ON) * Fast switching Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient 3 A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a -20 ±12 -10 -4.2 -3.4 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 o o o Co Co Co http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Thermal Data S G D B L A Top View H C J K Gate Source Drain D G S industrial surface mount application and suited for low Marking : 6402 * Power Management in Notebook Computer
Applications
- Protable Equipment * Battery Powered System combination of fast switching, low on-resistance The SMG6402 provide the designer with the best voltage applications such as DC/DC converters. 0 1- J u n - 2 0 0 2 R e v . A P a g e 1 o f 4 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
-4.2A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -20 -0.1 -0.5 100 -10 135 10.6 2.32 3.68 5.9 3.6 32.4 2.6 740 167 126 V V nA uA uA m nC nS pF Ω VGS=0V VDS=-15V f=1.0MHz VDS=-15V ID=-4.2A VGS=-10V RG=6 RD=3.6 Ω Ω ID=-4.2A VDS=-16V VGS=-4.5V VGS=-4.5V, ID=-3.7A VGS=-2.5V, ID=-3.1A VGS=0V, ID=-250uA VGS= 12V± VDS=-20V,VGS=0 VDS=-16V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 ,ID=-1mA Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time VSD Trr _ _ IS=-1.2A, VGS=0V. Is=4.2A,VGS=0V V nS -1.2 27.7 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.°C/W Forward Transconductance Gfs S9 VDS=-5V, ID=-2.8A_ _Reverse Recovery Charge 22 nC_ dl/dt=100A/uSQrr o C o C o C o C o Ω 01-Jun-2002 Rev. A Page 2 of 4
-4.2A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
-4.2A, -20V,RDS(ON) 65m P-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual