SMG6401

SMG6401 SECOS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• 1.8V Gate Rated * Fast switching speed Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter Symbol Ratings Unit Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a -12 -12 -4.3 -3.4 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 o o o Co Co Co 1,2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Thermal Data S G D B L A Top View H C J K Gate Source Drain D G S voltage applications such as DC/DC converters. Marking : 6401 * Power Management in Notebook Computer

Applications

• Protable Equipment * Battery Powered System * Ultra Low RDS(ON) and cost-effectiveness. combination of fast switching, low on-resistance The SMG6401 provide the designer with the best 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product

-4.3mA, -12V,RDS(ON) 50m P-Channel Enhancement Mode Power Mos.FET E l e c t r i c a l C h a r a c t e r i s t i c s ( T j = 2 5 C U n l e s s o t h e r w i s e s p e c i f i e d ) T o t a l G a t e C h a r g e RD S ( O N ) http://www. SeCoS GmbH. com / Any ch anging of sp eci fication wi l l n ot be informe d in divid u a l P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t D r a i n - S o u r c e B r e a k d o w n V o l t a g e B r e a k d o w n V o l t a g e T e m p . C o e f f i c i e n t G a t e T h r e s h o l d V o l t a g e G a t e - S o u r c e L e a k a g e C u r r e n t D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 2 5 ) S t a t i c D r a i n - S o u r c e O n - R e s i s t a n c e D r a i n - S o u r c e L e a k a g e C u r r e n t ( T j = 7 0 ) G a t e - S o u r c e C h a r g e G a t e - D r a i n ( " M i l l e r " ) C h a r g e T u r n - o n D e l a y T i m e R i s e T i m e T u r n - o f f D e l a y T i m e F a l l T i m e I n p u t C a p a c i t a n c e O u t p u t C a p a c i t a n c e R e v e r s e T r a n s f e r C a p a c i t a n c e B VD S S B VD S/ T j VG S ( t h ) IG S S ID S S C r s s Q g Q g s Q g d T d( O N ) T d( O f f ) T r C i s s C o s s Tf - 1 2 - 0 . 0 1 1 0 0 - 1 - 2 5 5 0 8 5 1 5 1 . 3 1 1 5 4 3 6 9 8 5 1 8 0 1 6 0 V V n A u A u A m n C n S p F Ω VG S= 0 V VD S= - 1 5 V f = 1 . 0 M H z VD S= - 1 0 V ID= - 1 A VG S= - 1 0 V RG= 3 . 3 RD= 1 0 Ω Ω ID= - 4 A VD S= - 1 2 V VG S= - 4 . 5 V VG S= - 4 . 5 V , ID= - 4 . 3 A VG S= - 2 . 5 V , ID= - 2 . 5 A VG S= 0 V , ID= - 2 5 0 u A VG S= 8V± VD S= - 1 6 V , VG S= 0 VD S= - 1 2 V , VG S= 0 VD S= VG S , ID= - 2 5 0 u A R e f e r e n c e t o 2 5 , ID= -1 m A S o u r c e - D r a i n D i o d e P a r a m e t e r S y m b ol M a x .T y p . T e s t C o n d i t i o nM i n . U n i t F o r w a r d O n V o l t a g e VS D N o t e s : 1 . P u l s e w i d t h l i m i t e d b y M a x . j u n c t i o n t e m p e r a t u r e . 2 . P u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % .≦≦ 3 . S u r f a c e m o u n t e d o n 1 i n c h2 c o p p e r p a d o f F R 4 b o a r d ; 2 7 0 w h e n m o u n t e d o n m i n . c o p p e r p a d .°C / W F o r w a r d T r a n s c o n d u c t a n c e G f s S12 VD S= - 5 V , ID= - 4 A_ 1 5 8 0 2 4 - 1 . 0 VG S= - 1 . 8 V , I D = - 2 A_ _ 1 2 5 R e v e r s e R e c o v e r y C h a r g e d l / d t = 1 0 0 A / u S I s = 4 . 0 A , VG S= 0R e v e r s e R e c o v e r y T i m e Q r r T r r 3 9 2 6 _ _ _ _ n S n C o Co Co Co Co Ω 01-Jun-2002 Rev. A Page 2 of 4

-4.3A, -12V,RDS(ON) 50m P-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve

-4.3A, -12V,RDS(ON) 50m P-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual