SMG5409-C SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5409-C -2.6A, -30V , R DS(ON) 120mΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 31-Jan-2018 Rev. B Page 1 of 4 SC -59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SMG5409-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent R DS(ON) and gate charge for most of the small power switching and load switch applications. The SMG5409-C meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced High Cell Density Trench Technology /circle6 Super Low Gate Charge MARKING 5409

PACKAGE INFORMATION

t≦10sec Steady State Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1, @V GS = -10V TA=25° C ID -2.6 -2.3 A TA=70° C -2.1 -1.8 Pulsed Drain Current 3 IDM -4.6 A Total Power Dissipation T A=25° C PD 1.32 1 W Operating Junction and Storage Temperature Range Tj, T stg -55~150 ° C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 R θJA t≦10sec, 95 ° C/W Steady State, 125 Thermal Resistance Junction-Ambient 2 270 Thermal Resistance Junction-Case 1 R θJC 80 Package MPQ Leader Size SC-59 3K 7 inch Part Number Type SMG5409-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.10 3.00 H 0.40 REF. C 1.20 1.70 J 0.047 0.207 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5409-C -2.6A, -30V , R DS(ON) 120mΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 31-Jan-2018 Rev. B Page 2 of 4 ELECTRICAL CHARACTERISTICS (T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250uA Gate Threshold Voltage V GS(th) -1 - -2.5 V V DS =V GS , I D = -250uA Forward Transconductance g fs - 3.8 - S V DS = -5V, I D = -2A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current T J=25° C IDSS - - -1 µA VDS = -24V, V GS =0 TJ=55° C - - -5 V DS = -24V, V GS =0 Static Drain-Source On-Resistance 4 R DS(ON) - - 120 m Ω VGS = -10V, I D = -2A Total Gate Charge Q g - 2.6 - nC ID = -2A VDS = -15V VGS = -4.5V Gate-Source Charge Q gs - 0.93 - Gate-Drain Charge Q gd - 0.95 - Turn-on Delay Time T d(on) - 1.5 - nS VDS = -15V VGS = -10V ID = -2A R G =3.3 Ω Rise Time T r - 25 - Turn-off Delay Time T d(off) - 11 - Fall Time T f - 5.2 - Input Capacitance C iss - 203 - pF VGS =0 VDS = -15V f=1MHz Output Capacitance C oss - 42 - Reverse Transfer Capacitance C rss - 34 - Source-Drain Diode Continuous Source Current 1 I S - - -2.3 A Pulsed Source Current 3 I SM - - -4.6 Forward on Voltage 4 V SD - - -1.2 V I S= -1A, V GS =0 Reverse Recovery Time t rr - 8.3 - nS IF= -2A, dI/dt=100A/ µs TJ=25° C Reverse Recovery Charge Q rr - 2 - nC Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. Copper pad. 3. Pulse width limited by maximum junction temperature, pulse width ≦300 µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300 µs, duty cycle ≦2%.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5409-C -2.6A, -30V , R DS(ON) 120mΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 31-Jan-2018 Rev. B Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5409-C -2.6A, -30V , R DS(ON) 120mΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 31-Jan-2018 Rev. B Page 4 of 4 CHARACTERISTIC CURVES