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http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG5406 3.6A , 30V , R DS(ON) 65 m N-Channel Enhancement Mode MOSFET 09-Nov-2012 Rev. B Page 1 of 4 Top View A L C B D G H JF K E 1 2 SC-59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications.
FEATURES
Simple Drive Requirement Small Package Outline MARKING 5406
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS ( TA=25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±20 V TA=25°C 3.6 Continuous Drain Current 2 , VGS@10V TA=70°C ID 2.8 A Pulsed Drain Current 1 IDM 10 A Power Dissipation T A=25°C P D 1.38 W Linear Derating Factor 0.01 W / °C Operating Junction and Storage Temperature Range Tj, Tstg -55~150 °C Thermal Resistance Rating Maximum Junction to Ambient 2 R θJA 90 °C / W Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG5406 3.6A , 30V , R DS(ON) 65 m N-Channel Enhancement Mode MOSFET 09-Nov-2012 Rev. B Page 2 of 4 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS=0, ID=250μA Gate-Threshold Voltage V GS(th) 1 - 3 V V DS=VGS, ID=250μA Gate-Body Leakage Current I GSS - - ±100 nA V GS=±20V - - 1 V DS=30V, VGS=0 Drain-Source Leakage Current I DSS - - 10 μA VDS=24V, VGS=0 - - 65 V GS=10V, ID=3.6A Drain-Source On-Resistance 1 R DS(ON) - - 90 mΩ VGS=4.5V, ID=2.8A Forward Transconductance g fs - 11 - S V DS=5V, ID=3.6A Dynamic Total Gate Charge1 Q g - 3 5 Gate-Source Charge Q gs - 0.8 - Gate-Drain Charge Q gd - 1.8 - nC VDS=24V, VGS=4.5V, ID=2.5A Turn-on Delay Time1 T d(on) - 5 - Rise Time T r - 9 - Turn-off Delay Time T d(off) - 11 - Fall Time T f - 2 - nS VDS=15V, VGS=10V, RG=3.3Ω, RD=15Ω, ID=1A Input Capacitance Ciss - 120 290 Output Capacitance Coss - 62 - Reverse Transfer Capacitance Crss - 24 - pF VGS=0, VDS=25V, f=1.0MHz Gate Resistance Rg - 3.5 - Ω f=1.0MHz Source-Drain Diode Diode Forward Voltage1 V SD - - 1.0 V I S=1A, VGS=0 Reverse Recovery Time1 T RR - 7.5 - ns Reverse Recovery Charge Q RR - 2.5 - nC IS=3.5A, VGS=0 dI/dt=100A/μs Notes: 1. Pulse width ≦300us, duty cycle≦2%.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG5406 3.6A , 30V , R DS(ON) 65 m N-Channel Enhancement Mode MOSFET 09-Nov-2012 Rev. B Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. Elektronische Bauelemente SMG5406 3.6A , 30V , R DS(ON) 65 m N-Channel Enhancement Mode MOSFET 09-Nov-2012 Rev. B Page 4 of 4 CHARACTERISTIC CURVES