SMG5403_15 SECOS | Alldatasheet
Document overview
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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5403 -2.6A , -30V , R DS(ON) 115 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 17-Sep-2012 Rev. A Page 1 of 4 Top View A L C B D G H JF K E 1 2 SC -59 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5403 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications.
FEATURES
/circle6 Lower Gate Threshold Voltage /circle6 Small Package Outline MARKING 5403
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS ( TA=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 3 TA=25° C ID -2.6 A TA=70° C -2.2 Pulsed Drain Current 1 IDM -10 A Power Dissipation T A=25° C P D 1.38 W Linear Derating Factor 0.01 W / ° C Operating Junction and Storage Temperature Range TJ, TSTG -55~150 ° C Thermal Resistance Rating Maximum Junction to Ambient 3 R θJA 90 ° C / W REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5403 -2.6A , -30V , R DS(ON) 115 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 17-Sep-2012 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250 µA Gate-Threshold Voltage V GS(th) -0.5 - -1.4 V V DS =V GS , I D = -250 µA Forward Transconductance g FS - 5 - S V DS = -5V, ,ID = -2.5A Gate-Body Leakage Current I GSS - - ±100 nA VGS =±12V Drain-Source Leakage Current TJ=25° C IDSS - - -1 µA VDS = -30V, V GS =0 TJ=70° C - - -25 V DS = -24V, V GS =0 Drain-Source On-Resistance 2 R DS(ON) - - 115 m Ω VGS = -10V, I D = -2.6A Total Gate Charge 2 Q g - 4.5 - nC VDS = -15V, VGS = -4.5V, ID = -2.5A Gate-Source Charge Q gs - 0.8 - Gate-Drain Charge Q gd - 1.34 - Turn-on Delay Time 2 T d(on) - 5.4 - nS VDS = -15V, VGS = -10V, R G =3.3 Ω, R D =4.6 Ω, ID = -1A Rise Time T r - 4.6 - Turn-off Delay Time T d(off) - 31 - Fall Time Tf - 8 - Input Capacitance C iss - 415 - pF VGS =0 VDS = -25V, f=1.0MHz Output Capacitance C oss - 55 - Reverse Transfer Capacitance C rss - 42 - Source-Drain Diode Diode Forward Voltage 2 V SD - - -1.2 V I S= -1.2A, V GS =0 Reverse Recovery Time T rr - 16.2 - nS IS= -2.5A, V GS =0 dl/dt=100A/ µS Reverse Recovery Charge Q rr - 9 - nC Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300 µs, duty cycle ≦2%. 3. Surface mounted on 1 in 2 copper pad of FR4 board; 270°C / W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5403 -2.6A , -30V , R DS(ON) 115 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 17-Sep-2012 Rev. A Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5403 -2.6A , -30V , R DS(ON) 115 mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 17-Sep-2012 Rev. A Page 4 of 4 CHARACTERISTIC CURVES