SMG5402_15 SECOS | Alldatasheet
Document overview
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Technical content
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5402 4A , 30V , R DS(ON) 55 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 26-Oct-2012 Rev. A Page 1 of 4 Top View A L C B D G H JF K E 1 2 SC -59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications.
FEATURES
/circle6 Simple Drive Requirement /circle6 Small Package Outline MARKING 5402
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS ( TA=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 3 , V GS @4.5V TA=25° C ID A TA=70° C 3 Pulsed Drain Current 1,2 IDM 16 A Power Dissipation T A=25° C P D 1.38 W Linear Derating Factor 0.01 W / ° C Operating Junction and Storage Temperature Range Tj, T stg -55~150 ° C Thermal Resistance Rating Maximum Junction to Ambient 3 R θJA 90 ° C / W REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5402 4A , 30V , R DS(ON) 55 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 26-Oct-2012 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (T A=25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Gate-Threshold Voltage V GS(th) 0.5 - 1.5 V V DS =V GS , I D =250 µA Gate-Body Leakage Current I GSS - - ±100 nA VGS =±12V Drain-Source Leakage Current T J=25° C IDSS - - 1 µA VDS =30V, V GS =0 TJ=70° C - - 25 V DS =24V, V GS =0 Drain-Source On-Resistance R DS(ON) - - 55 m Ω VGS =10V, I D =4A - - 70 V GS =4.5V, I D =3A - - 110 V GS =2.5V, I D =2A Forward Transconductance g fs - 3 - S V DS =10V, I D =3A Dynamic Total Gate Charge 2 Q g - 6 - nC VDS =15V, VGS =4.5V, ID =3A Gate-Source Charge Q gs - 1 - Gate-Drain (‘‘Miller’’) Charge Q gd - 2.8 - Turn-on Delay Time 2 T d(on) - 5.8 - nS VDS =15V, VGS =5V, R G =3.3 Ω, R D =15 Ω, ID =1A Rise Time T r - 9.6 - Turn-off Delay Time 2 T d(off) - 14.4 - Fall Time Tf - 3.9 - Input Capacitance Ciss - 335 - pF VGS =0, VDS =25V, f=1.0MHz Output Capacitance Coss - 50 - Reverse Transfer Capacitance Crss - 45 - Source-Drain Diode Diode Forward Voltage 2 V SD - - 1.2 V I S=1.2A, V GS =0 Reverse Recovery Time 2 T RR - 15 - ns IS=3A, V GS =0 dI/dt=100A/ µs Reverse Recovery Charge Q RR - 8 - nC Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle ≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270° C /W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5402 4A , 30V , R DS(ON) 55 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 26-Oct-2012 Rev. A Page 3 of 4 CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG5402 4A , 30V , R DS(ON) 55 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 26-Oct-2012 Rev. A Page 4 of 4 CHARACTERISTIC CURVES