SMG4008-C SECOS | Alldatasheet
Document overview
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Technical content
5A, 40V , R DS(O/glyph1197) 35mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 01-Dec-2017 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free
FEATURES
/circle6 40V/5A RDS(µN) ≦35mΩ @V GS =10V RDS(µN) ≦45mΩ @V GS =4.5V /circle6 Reliable and Rugged /circle6 Green Device Available APPLICATION /circle6 Power Management in Notebook Computer /circle6 Portable Equipment and Battery Powered Systems MARKING
PACKAGE INFORMATION
SµT-23 3K 7 inch ORDER INFORMATION MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V TA=25°C 5 Continuous Drain Current, VGS @10V 1 TA=70°C ID A Pulsed Drain Current 3 IDM 15 A Power Dissipation T A=25°C P D 1.38 W µperating Junction & Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Thermal Resistance from Junction-Ambient 1 90 Thermal Resistance from Junction-Ambient 2 RθJA 270 °C/W Part Number Type SMG4008-C Lead (Pb)-free and Halogen-free SOT-23 4008 Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0 0.18 B 2.10 2.95 H 0.55 REF. C 1.20 1.7 J 0.08 0.20 D 0.89 1.3 K 0.6 REF. E 1.70 2.3 L 0.95 BSC. F 0.30 0.50
5A, 40V , R DS(O/glyph1197) 35mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 01-Dec-2017 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T J=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 40 - - V V GS =0, I D =250µA Gate-Threshold Voltage V GS(th) 1 - 2.5 V V DS =VGS, ID =250µA Forward Transconductance g fs - 14 - S V DS =5V, ID =4A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V TJ=25°C - - 1 Drain-Source Leakage Current TJ=55°C IDSS - - 5 µA V DS =32V, V GS =0 - - 35 V GS =10V, I D =4A Static Drain-Source µn-Resistance 4 R DS(µN) - - 45 mΩ VGS =4.5V, I D =3A Total Gate Charge Q g - 5.5 - Gate-Source Charge Q gs - 1.25 - Gate-Drain Charge Q gd - 2.5 - nC ID =5A VDS=20V VGS =4.5V Turn-on Delay Time T d(on) - 8.9 - Rise Time Tr - 2.2 - Turn-off Delay Time T d(off) - 41 - Fall Time Tf - 2.7 - nS VDS=20V ID =1A VGS =10V RG =3.3Ω RL =20Ω Input Capacitance C iss - 593 - µutput Capacitance C oss - 76 - Reverse Transfer Capacitance C rss - 56 - pF VGS =0 VDS =15V f=1MHz Source-Drain Diode Forward on Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Continuous Source Current 1 I S - - 5 Pulsed Source Current 3 I SM - - 15 A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2µZ copper, t ≦10s. 2. When mounted on Min. Copper pad. 3. Pluse width limited by maximum junction temperature, pulse width ≦300µs, duty cycle ≦2%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.
5A, 40V , R DS(O/glyph1197) 35mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 01-Dec-2017 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
5A, 40V , R DS(O/glyph1197) 35mΩ /glyph1197-Ch Enhancement Mode Power MOSFET 01-Dec-2017 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES