SMG3403A SECOS | Alldatasheet
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Operating Junction and Storage Temperature Range Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient 3 A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a -30 ±12 -10 -3.2 -2.6 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 1,2 o o C o C o C o o Max. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S Marking : 3403A * Small Package Outline * Simple Drive Requirment 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product
Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=55 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -30 -0.1 -0.5 100 -25 1.8 3.6 735 100 V V nA uA uA m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDS=-15V ID=- 3.2A VGS=-10V RG=3.3 RD=4.6 Ω Ω ID=-3.2A VDS=-24V VGS=-4.5V VGS=-10V, ID=- 2.6A VGS=-4.5V, ID=-2.0A VGS=0V, ID=-250uA VGS= 12V± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 , ID=-1mA Forward Transconductance Gfs S9 VDS=-5V, ID=-3A_ 1325 -1.2 o C o C o C o C o 120__ VGS=-2.5V, ID=-1.0A Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VSD __ IS=-1.2A, VGS=0V.V-1.2 Reverse Recovery Charge dl/dt=100A/uS Is=-3.2A, VGS=04 Reverse Recovery Time Qrr Trr 2 _ _ _ _ nS nC http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.°C/W 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SMG3403A -3.2A, -30V,RDS(ON) 70m P-Channel Enhancement Mode Power Mos.FET Ω
01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Elektronische Bauelemente SMG3403A -3.2A, -30V,RDS(ON) 70m P-Channel Enhancement Mode Power Mos.FET Ω
01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform Elektronische Bauelemente SMG3403A -3.2A, -30V,RDS(ON) 70m P-Channel Enhancement Mode Power Mos.FET Ω