SMG3403_15 SECOS | Alldatasheet
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Operating Junction and Storage Temperature Range Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient 3 A V V A A ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a -30 ±20 -3.7 -3.0 1.38 0.01 -55~+150 Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 1,2 o o C o C o C o o Max. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S Marking : 3403 * Small Package Outline * Simple Drive Requirment 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product
Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=55 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf -30 -0.02 -1.0 100 -25 120 412 V V nA uA uA m nC nS pF Ω VGS=0V VDS=-25V f=1.0MHz VDS=-15V ID=-1A VGS=-10V RG=3.3 RD=15 Ω Ω ID=-3A VDS=-24V VGS=-4.5V VGS=-10V, ID=- 3A VGS=-4.5V, ID=-2.6A VGS=0V, ID=-250uA VGS= 20V± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Reference to 25 , ID=-1mA Source-Drain Diode Forward Transconductance Gfs S5 VDS=-10V, ID=-3A_ 660 -3.0 o C o C o C o C o Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VSD __ IS=-1.2A, VGS=0V.V-1.2 Reverse Recovery Charge dl/dt=100A/uS Is=-3A, VGS=0Reverse Recovery Time Qrr Trr 20 _ _ _ _ nS nC http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 when mounted on min. copper pad.°C/W 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SMG3403 -3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET Ω
01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SMG3403 -3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET Ω
01-Jun-2002 Rev. A Page 4 of 4 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Elektronische Bauelemente SMG3403 -3.7A, -30V,RDS(ON) 75m P-Channel Enhancement Mode Power Mos.FET Ω