SMG3402_15 SECOS | Alldatasheet
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Technical content
N-Ch Enhancement Mode Power MOSFET
4.6 A, 30 V , RDS(ON) , 30 mΩΩ ΩΩ
01-December-2008 Rev. A Page 1 of 4 3402 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES /circle6 The SMG3402 uses advanced trench technology to provide excellent on-resistance. /circle6 The device is suitable for use as a load switch or in PWM applications. /circle6 Lower On-resistance
PACKAGE INFORMATION
Weight: 0.07800g MARKING CODE ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 3 ID @T A=25 ℃ 4.6 A Continuous Drain Current3 ID @T A=70℃ 3.7 A Pulsed Drain Current 1,2 IDM 16 A Total Power Dissipation P D @T A=25 ℃ 1.38 W Operating Junction and Storage Temperature Range TJ, T STG -55 ~ +150 ℃ Linear Derating Factor 0.01 W/ ℃ THERMAL DATA Parameter Symbol Value Unit Thermal Resistance Junction-ambient 3 Max R θJ-AMB 90 ℃/W Gate Source Drain Top View A L C B D G H JF K E 1 2 A 2.70 3.10 G 0.10 REF. B 2. 25 3.00 H 0.40 REF. C 1.3 0 1. 70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 SC-59
N-Ch Enhancement Mode Power MOSFET 01-December-2008 Rev. A Page 2 of 4
ELECTRICAL CHARACTERISTICS
(Tj = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 30 - - V V GS = 0, I D = 250 uA Gate Threshold Voltage V GS(th) 1.0 - 2.5 V V DS = VGS , I D = 250 µA Forward Transconductance gfs - 5 - S V DS = 5 V, I D = 4.6 A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20 V Drain-Source Leakage Current(Tj=25 ℃) - - 1 uA V DS = 30 V, V GS = 0 Drain-Source Leakage Current(Tj=55 ℃) IDSS - - 5 uA V DS = 24 V, V GS = 0 - - 30 V GS = 10 V, I D = 4.6 A Static Drain-Source On-Resistance RDS(ON) - - 42 m Ω VGS = 4.5 V, I D = 4.0 A Total Gate Charge 2 Q g - 15.8 - Gate-Source Charge Q gs - 2 - Gate-Drain (“Miller”) Charge Q gd - 3 - nC ID = 4.6 A VDS = 15 V VGS = 10 V Turn-on Delay Time 2 T d(on) - 4.8 - Rise Time T r - 3.9 - Turn-off Delay Time T d(off) - 27.7 - Fall Time T f - 5.5 - ns VDS = 15 V ID = 1 A VGS = 10 V R G = 6 Ω R L = 15 Ω Input Capacitance C iss - 782 - Output Capacitance C oss - 135 - Reverse Transfer Capacitance C rss - 93 - pF VGS = 0 V VDS = 15 V f = 1.0 MHz SOURCE-DRAIN DIODE Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage 2 V SD - - 1.2 V I S= 1.25 A, V GS =0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦300us, duty cycle ≦2%. 3. Surface mounted on 1in 2 copper pad of FR4 board; 270 °C/W when mounted on Min. copper pad.
N-Ch Enhancement Mode Power MOSFET 01-December-2008 Rev. A Page 3 of 4 CHARACTERISTIC CURVE
N-Ch Enhancement Mode Power MOSFET 01-December-2008 Rev. A Page 4 of 4 CHARACTERISTIC CURVES (cont’d)