SMG3401-C

SMG3401-C SECOS | Alldatasheet

Document overview

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3401-C -4.2A , -30V , R DS(ON) 50mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 1 of 4 SC -59 TOP VIEW RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The SMG3401-C is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The SMG3401-C meet the RoHS and Green Product requirement with full function reliability approved.

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Green Device Available MARKING 3401

PACKAGE INFORMATION

≦10sec Steady State Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 1@V GS = -10V TA=25° C ID -4.2 -3.7 A TA=70° C -3.5 -3 Pulsed Drain Current 3 IDM -30 A Power Dissipation T A=25° C PD 1.4 W Operating Junction and Storage Temperature Range TJ, T stg -55~150 ° C Thermal Resistance Rating Thermal Resistance Junction-ambient 1 R θJA ≦10sec, 90 ° C/W Steady State,125 Thermal Resistance Junction-ambient 2 270 Thermal Resistance Junction-case 1 R θJC 80 Package MPQ Leader Size SC-59 3K 7 inch Part Number Type SMG3401-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2. 10 3.00 H 0.40 REF. C 1.2 0 1. 70 J 0. 047 0.20 7 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3401-C -4.2A , -30V , R DS(ON) 50mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 2 of 4

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS -30 - - V V GS =0, I D = -250uA Gate-Threshold Voltage V GS(th) -0.6 - -1.3 V V DS =V GS , I D = -250uA Forward Transconductance g fs - 5.6 - S V DS = -5V, I D = -3A Gate-Body Leakage Current I GSS - - ±100 nA V GS = ±12V Drain-Source Leakage Current TJ=25° C IDSS - - -1 µA VDS = -24V, V GS =0 TJ=55° C - - -5 V DS = -24V, V GS =0 Drain-Source On-Resistance 4 R DS(ON) - - 50 m Ω VGS = -10V, I D = -4.2A Total Gate Charge Q g - 11.9 - nC VDS = -15V VGS = -4.5V ID = -3A Gate-Source Charge Q gs - 1.8 - Gate-Drain (‘‘Miller’’) Charge Q gd - 3 - Turn-on Delay Time T d(on) - 6.6 - nS VDD = -15V VGS = -4.5V ID = -3 R G =3.3 Ω R L=5Ω Rise Time Tr - 27.8 - Turn-off Delay Time T d(off) - 46.2 - Fall Time Tf - 20.6 - Input Capacitance C iss - 920 - pF VGS =0 VDS = -15V f=1.0MHz Output Capacitance C oss - 73 - Reverse Transfer Capacitance C rss - 71 - Source-Drain Diode Diode Forward Voltage 4 V SD - - -1.2 V I S= -1A, V GS =0 Continuous Source Current 1 I S - - -3.7 A Pulsed Source Current 3 I SM - - -15 A Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature. 4. The data tested by pulsed, pulse width ≦300us, duty cycle ≦2%.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3401-C -4.2A , -30V , R DS(ON) 50mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3401-C -4.2A , -30V , R DS(ON) 50mΩΩ ΩΩ P-Channel Enhancement Mode MOSFET Elektronische Bauelemente 25-May-2017 Rev. B Page 4 of 4 CHARACTERISTIC CURVES