SMG3400 SECOS | Alldatasheet
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- Small Package Outline * RoHS Compliant Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain D G S 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product The SMG3400 is universally used for all commercial-industrial applications. * Lower Gate Charge cost-effectiveness device. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current3 ID @TA=25: 5.8 A Continuous Drain Current3 ID @TA=70: 4.9 A Pulsed Drain Current1,2 IDM 30 A Total Power Dissipation PD @TA=25: 1.38 W Linear Derating Factor 0.01 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient3 Max. Rthj-a 90 :/W
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Ω 01-Jun-2002 Rev. A Page 2 of 4 Source□Leakage□Current(Tj=25 )□: Elektronische Bauelemente SMG3400 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics (Tj = 25:::: unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID=250uA Gate Threshold Voltage VGS(th) 0.7 - 1.4 V VDS=VGS, ID=250uA Forward Transconductance gfs - 15 - S VDS=5V, ID=5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±12V Drain-Source Leakage Current(Tj=25:) - - 1 uA VDS=24V, VGS=0 Drain-Source Leakage Current(Tj=55:) IDSS - - 5 uA VDS=24V, VGS=0 - - 28 VGS=10V, ID=5.8A - - 33 VGS=4.5V, ID=5.0A Static Drain-Source On-Resistance RDS(ON) - - 52 m VGS=2.5V, ID=4.0A Total Gate Charge2 Qg - 9.7 12 Gate-Source Charge Qgs - 1.6 - Gate-Drain (“Miller”) Change Qgd - 3.1 - nC ID=5.8A VDS=15V VGS=4.5V Turn-on Delay Time2 Td(on) - 3.3 - Rise Time Tr - 4.8 - Turn-off Delay Time Td(off) - 26.3 - Fall Time Tf - 4.1 - ns VDS=15V VGS=10V RG=3 RL=2.7 Input Capacitance Ciss - 823 1030 Output Capacitance Coss - 99 - Reverse Transfer Capacitance Crss - 77 - pF VGS=0V VDS=15V f=1.0MHz Gate Resistance Rg - 1.2 3.6 f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.0 V IS=1.0A, VGS=0V Reverse Recovery Time2 Trr - 16 - ns Reverse Recovery Charge Qrr - 8.9 - nC IS=5A, VGS=0V dI/dt=100A/s Continuous Source Current (Body Diode) IS - - 2.5 A VD=VG=0V, VS=1.0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2% . 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 /W when mounted on Min. copper pad.:
Ω Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve Elektronische Bauelemente SMG3400 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET 0.000001 0.00001 0.0001 0.001 0.01 0.1
Ω 01-Jun-2002 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Fig□9.□Transfer□Characteristics□ Fig□10.□Single□Pulse□Power□ □ Fig□7.□Gate□Charge□Characteristics□ Fig□8.□Typical□Capacitance□Characteristics□ Fig□11.□Normalized□Thermal□Transient□Impedance,□Junction□to□Ambient Elektronische Bauelemente SMG3400 5.8A, 30V,RDS(ON) 28m N-Channel Enhancement Mode Power Mos.FET