SMG3215-C SECOS | Alldatasheet

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Technical content

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3215-C 1.25A, 150V , R DS(ON) 320mΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 21-Jun-2018 Rev. B Page 1 of 4 SC -59 RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

FEATURES

/circle6 150V/1.25A R DS(ON) ≦320m Ω@V GS =10V R DS(ON) ≦350m Ω@V GS =6V /circle6 Reliable and Rugged /circle6 Green Device Available APPLICATION  Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. MARKING 3215

PACKAGE INFORMATION

Parameter Symbol Ratings Unit Drain-Source Voltage VDS 150 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1, @V GS =10V TA=25° C ID 1.25 A TA=70° C 1 Pulsed Drain Current 3 IDM 5 A Total Power Dissipation T A=25° C PD 1 W Operating Junction and Storage Temperature Range TJ, T stg -55~150 ° C Thermal Resistance Ratings Thermal Resistance Junction-Ambient 1 R θJA 125 ° C/W Thermal Resistance Junction-Ambient 2 270 Thermal Resistance Junction-Case 1 R θJC 80 Package MPQ Leader Size SC-59 3K 7 inch Part Number Type SMG3215-C Lead (Pb)-free and Halogen-free Top View A L C B D G H JF K E 1 2 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2. 10 3.00 H 0.40 REF. C 1.2 0 1. 70 J 0. 047 0. 20 7 D 0.89 1.40 K 0.5 REF. E 2.00 Typ. L 0.95 REF. F 0.30 0.50 TOP VIEW

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3215-C 1.25A, 150V , R DS(ON) 320mΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 21-Jun-2018 Rev. B Page 2 of 4

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 150 - - V V GS =0, I D =250µA Gate Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250µA Forward Transconductance g fs - 2.5 - S V DS =15V, I D =1A Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±20V Drain-Source Leakage Current T J=25° C IDSS - - 1 µA VDS =120V, V GS =0 TJ=55° C - - 10 V DS =120V, V GS =0 Static Drain-Source On-Resistance 4 R DS(ON) - 260 320 m Ω VGS =10V, I D =1A - 280 350 V GS =6V, I D =1A Total Gate Charge Q g - 7.5 - nC ID =1A VDS =75V VGS =10V Gate-Source Charge Q gs - 1.5 - Gate-Drain Charge Q gd - 2 - Turn-on Delay Time T d(on) - 12 - nS VDS =75V ID =1A VGS =10V R G =6Ω Rise Time T r - 16 - Turn-off Delay Time T d(off) - 32 - Fall Time Tf - 17 - Input Capacitance C iss - 290 - pF VGS =0 VDS =30V f=1MHz Output Capacitance C oss - 30 - Reverse Transfer Capacitance C rss - 12 - Source-Drain Diode Continuous Source Current 1 I S - - 1.25 A Pulsed Source Current 3 I SM - - 5 Forward on Voltage 4 V SD - - 1.2 V I S=1A, V GS =0 Reverse Recovery Time t rr - 44.5 - nS IF=1.25A, dI/dt=100A/µs TJ=25° C Reverse Recovery Charge Q rr - 15.8 - nC Notes: 1. Surface mounted on 1”x1” FR4 board with 2OZ copper. 2. When mounted on Min. copper pad. 3. Pulse width limited by maximum junction temperature, Pulse Width ≦100 µs, Duty Cycle ≦1%. 4. Pulse Test: Pulse Width≦300 µs, Duty Cycle ≦2%.

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3215-C 1.25A, 150V , R DS(ON) 320mΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 21-Jun-2018 Rev. B Page 3 of 4 CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SMG3215-C 1.25A, 150V , R DS(ON) 320mΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 21-Jun-2018 Rev. B Page 4 of 4 CHARACTERISTIC CURVES