SMG3018K SECOS | Alldatasheet
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Marking : 3018E The SMG3018K utilized advanced processing techniques to achieve the lowest possible on- resistance, extremely efficient and cost- effectiveness device. The SMG3018K is universally used for all commercial-industrial applications. Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Absolute Maximum Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current mA mA mA 640 500 950 1.38 1,2 Continuous Drain Current Pulsed Drain Current Parameter Symbol Ratings Unit Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient V V ID@TA=70 /W C W / C C W VDS VGS ID@TA=25 IDM PD@TA=25 Tj, Tstg Rthj-a 0.01 -55~+150 o o o C o C o C o Max. Dim Min Max A 2.70 3.10 B 1.40 1.60 C 1.00 1.30 D 0.35 0.50 G 1.70 2.10 H 0.00 0.10 J 0.10 0.26 K 0.20 0.60 L 0.85 1.15 S 2.40 2.80 All Dimension in mm SC-59 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual S G D B L A Top View H C J K Gate Source Drain 01-Jun-2002 Rev. A Page 1 of 4 * RoHS Compliant * Simple Drive Requirement * Small Package Outline D G S
Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) V V uA uA uA nC nS pF Ω VGS=0V, ID=250uA VDS=VGS, ID=250uA Reference to 25 , ID=1m C o 0.06 0.5 2.0 100 0.5 0.5 C o 1.6 VGS=0V VDS=25V f=1.0MHz VDD=30V ID=600mA VGS=10V RG=3.3 RD=52 Ω Ω ID=600mA VDS=50V VGS=4.5V VGS=4V, ID=10mA VGS= ± 20V VDS=3 V,VGS=0 VDS=24V,VGS=0 Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time I nput Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf A Forward Transconductance Gfs mS__ C o C o
600 VDS=10V, ID=600mA
__ 13 VGS=2.5V, ID=1mA o 01-Jun-2002 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Source-Drain Diode Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage VDS __ IS=1.2 A, VGS=0V.V1.2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width 300us, dutycycle 2%.≦≦ Elektronische Bauelemente SMG3018K 640mA, 30V,RDS(ON)8 N-Channel Enhancement Mode Power Mos.FET Ω 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 O C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Characteristics Curve Fig 5. Forward Char acteristics of Reverse Diode Fig 1. Typical Output Char acteristics Fig 4. Normalized On-Resistance v.s. Ju nction Temperature Fig 6. Gate Threshold Voltage v.s. Ju nction Temperature Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Elektronische Bauelemente SMG3018K 640mA, 30V,RDS(ON)8 N-Channel Enhancement Mode Power Mos.FET Ω
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform Elektronische Bauelemente SMG3018K 640mA, 30V,RDS(ON)8 N-Channel Enhancement Mode Power Mos.FET Ω