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2.2 A, 60 V , RDS(ON) 194 m
N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 25-Nov-2010 Rev. A Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life. Low gate charge Fast switching Miniature SC-59 surface mount package saves board space. PRODUCT SUMMARY SMG2398NE VDS(V) RDS(on) (m I D(A) 60 194@VGS= 10V 2.2 273@VGS= 4.5V 1.8
PACKAGE INFORMATION
SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED) Parameter Symbol Ratings Unit Maximum Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current 1 ID @ TA=25°C ID 2.2 A ID @ TA=70°C 1.7 A Pulsed Drain Current 2 IDM ±15 A Continuous Source Current (Diode Conduction) 1 IS 1.7 A Power Dissipation 1 PD @ TA=25°C PD 1.3 W PD @ TA=70°C 0.8 W Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Unit Maximum Junction to Ambient 1 t ≦ 5 sec RJA 100 °C / W Steady State 166 Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. Top View A L C B D G H JF K E 1 2 SC-59 REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50 ESD Protection Diode 2KV
N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente 25-Nov-2010 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 1.0 - - V V DS=VGS, ID= 250uA Gate-Body Leakage I GSS - - ±100 nA V DS= 0V, VGS= ±20V Zero Gate Voltage Drain Current I DSS - - 1 uA VDS= 48V, VGS= 0V - - 50 VDS= 48V, VGS= 0V, TJ= 55°C On-State Drain Current 1 I D(on) 10 - - A V DS = 5V, VGS= 10V Drain-Source On-Resistance 1 R DS(ON) - - 194 mΩ VGS= 10V, ID= 2.2A - - 273 V GS= 4.5V, ID= 1.8A Forward Transconductance 1 g fs - 8 - S V DS= 4.5V, ID= 2.2A Diode Forward Voltage V SD - - 1.2 V I S= 1.7A, VGS= 0V DYNAMIC 2 Total Gate Charge Q g - 4.0 - nC VDS= 30V, VGS= 5V, ID= 2.2A Gate-Source Charge Q gs - 4.0 - Gate-Drain Charge Q gd - 2.0 - Turn-on Delay Time T d(on) - 10 - nS VDD= 30V, VGEN= 10V, RL= 30, ID= 1A Rise Time T r - 10 - Turn-off Delay Time T d(off) - 20 - Fall Time T f - 10 - Source-Ddrain Reverse Recovery Time TRR - 50 - I F=1.7A, di/dt=100 A / uS Notes 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not su bject to production testing.