DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

-1A, -100V , RDS(ON) 1.2  P-Channel Enhancement MOSFET Elektronische Bauelemente 15-Mar-2011 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. SC-59 Top View A L C B D G H JF K E 1 2 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

 Low RDS(on) trench technology.  Low thermal impedance.  Fast switching speed.

APPLICATIONS

 PoE Power Sourcing Equipment  PoE Powered Devices  Telecom DC/DC converters.  White LED boost converters.

PACKAGE INFORMATION

SC-59 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage V GS ±20 V Continuous Drain Current 1 TA=25°C ID A TA=70°C -0.8 Pulsed Drain Current 2 I DM -10 A Continuous Source Current (Diode Conduction) 1 I S -1.6 A Power Dissipation 1 TA=25°C PD 1.3 W TA=70°C 0.8 Operating Junction and Storage Temperature Range TJ, TSTG -55 ~ 150 °C Thermal Resistance Data Maximum Junction to Ambient 1 t≦10 sec RθJA 100 °C/W Steady-State 166 Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 2.70 3.10 G 0.10 REF. B 2.25 3.00 H 0.40 REF. C 1.30 1.70 J 0.10 0.20 D 1.00 1.40 K 0.45 0.55 E 1.70 2.30 L 0.85 1.15 F 0.35 0.50

-1A, -100V , RDS(ON) 1.2  P-Channel Enhancement MOSFET Elektronische Bauelemente 15-Mar-2011 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Gate-Source Threshold Voltage V GS(th) -1 - -3.5 V V DS=VGS, ID= -250μA Gate-Body Leakage I GSS - - ±100 nA V DS=0, VGS= ±20V Zero Gate Voltage Drain Current I DSS - - -1 μA VDS= -80V, VGS=0 - - -25 VDS= -80V, VGS=0, TJ=55°C On-State Drain Current 1 I D(ON) -10 - - A V DS= -10V, VGS= -10V Drain-Source On-Resistance 1 R DS(ON) - - 1.2 Ω VGS= -10V, ID= -1A Forward Transconductance 1 g FS - 5 - S V DS= -15V,,ID= -1A Diode Forward Voltage V SD - -0.81 - V I S= -0.8A, VGS=0 Dynamic 2 Total Gate Charge Q g - 3.7 - nC ID= -1A VDS= -50V VGS= -4.5V Gate-Source Charge Q gs - 1.1 - Gate-Drain Charge Q gd - 1.7 - Turn-On Delay Time Td (ON) - 3.5 - nS VDD= -50V VGEN= -10V RL=50Ω ID= -1A RGEN=6Ω Rise Time T r - 3.8 - Turn-Off Delay Time Td (OFF) - 15.5 - Fall Time T f - 10.3 - Input Capacitance C iss - 358 - pF f=1MHz VDS= -15V VGS=0 Output Capacitance C oss - 54 - Reverse Transfer Capacitance C rss - 29 - Notes: 1. Pulse test ：PW≦300 us duty cycle≦2%. 2. Guaranteed by design, not subject to production testing.

-1A, -100V , RDS(ON) 1.2  P-Channel Enhancement MOSFET Elektronische Bauelemente 15-Mar-2011 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

-1A, -100V , RDS(ON) 1.2  P-Channel Enhancement MOSFET Elektronische Bauelemente 15-Mar-2011 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE